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ADG466BN

Analog Devices

ADG466BN by Analog Devices

ADG466BN by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It features 80 ohm Max RDS(on) and 0.02A Max ID, suitable for ENHANCEMENT MODE operation. This RECTANGULAR package with 8 terminals uses METAL-OXIDE SEMICONDUCTOR tech in PLASTIC/EPOXY body, ideal for various electronic circuits.

Median Price

$1.490

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 144 parts In-Stock

1+ parts

-

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$1.490

1k+ parts

$1.330

10k+ parts

$1.260

144

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$1.490

$1.330

$1.260

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 805 parts In-Stock

1+ parts

$1.586

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805

$1.586

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Vyrian

USA . 7,156 parts In-Stock

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7,156

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Atlantic Semiconductor

USA . 112 parts In-Stock

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112

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Bristol Electronics

USA . 110 parts In-Stock

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110

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J & M Industries LLC

USA . 7 parts In-Stock

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7

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Distributors (Availability)

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Parana Technologies

USA . 7,667 parts In-Stock

1+ parts

$1.344

100+ parts

-

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$1.250

10k+ parts

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7,667

$1.344

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$1.250

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IDEA Electronic Components Group

UK . 136 parts In-Stock

1+ parts

$1.445

100+ parts

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$1.373

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136

$1.445

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$1.373

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Corphita

USA . 282 parts In-Stock

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$1.503

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282

$1.503

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DigiPath Technology Company

USA . 2,035 parts In-Stock

1+ parts

$2.254

100+ parts

$2.164

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2,035

$2.254

$2.164

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Native Components

USA . 216 parts In-Stock

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$40.015

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$38.414

216

$40.015

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$38.414

Northwest PG Solutions

USA . 2,312 parts In-Stock

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$44.016

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2,312

$44.016

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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2,800

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Overview

Upgrade your electronic projects with the ADG466BN from Analog Devices, a top-quality N-channel small signal field effect transistor perfect for switching applications. Analog Devices is a trusted manufacturer known for their reliable components, and this FET is no exception. Its enhancement mode operation and low on-resistance of 80 ohms make it ideal for high-performance circuits. With 8 terminals and a dual terminal position, this transistor offers versatility and ease of use. Trust in the ADG466BN to deliver exceptional performance and reliability in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the transistor, ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher electron mobility, making them efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can handle high-speed transitions with minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement on circuit boards, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering on circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs provide low off-state leakage and fast turn-on speeds, making them ideal for high-frequency switching applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs provide low input capacitance and high input impedance, reducing power losses and improving overall efficiency.

Maximum Drain Current (ID): 0.02 A

With a maximum drain current of 0.02A, this FET can handle moderate power loads efficiently.

Maximum Drain-Source On Resistance: 80 ohm

The low on-resistance of 80 ohms minimizes power loss and heat generation during operation.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and allows for easy integration into various electronic systems.

Technical Specifications

Small Signal Field Effect Transistors (FET) ADG466BN attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Analog Devices

Specs

Maximum Drain Current (ID):

.02 A

Maximum Drain-Source On Resistance:

80 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ADG466BN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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