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ADG467BR-REEL7

Analog Devices

ADG467BR-REEL7 by Analog Devices

ADG467BR-REEL7 by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 18 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 95 ohm. The package is RECTANGULAR, surface mountable, with MSL level 3 and max temp of 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,969 parts In-Stock

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Chip Stock

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Digiode

USA . 297 parts In-Stock

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Parana Technologies

USA . 15,571 parts In-Stock

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$0.300

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$0.279

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IDEA Electronic Components Group

UK . 908 parts In-Stock

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$0.323

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$0.307

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DigiPath Technology Company

USA . 1,297 parts In-Stock

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$0.504

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$0.484

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Advanced Electronics

New Zealand . 800 parts In-Stock

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$1.322

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$1.309

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$1.256

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Northwest PG Solutions

USA . 2,101 parts In-Stock

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$2.970

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AZTECH Wire

Italy . 449 parts In-Stock

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$11.908

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Ampacity Inc.

Singapore . 556 parts In-Stock

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$30.050

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One Stop Electronics

USA . 623 parts In-Stock

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Semicontronic

India . 1,155 parts In-Stock

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$62.449

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$62.128

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Component Stockers USA

USA . 689 parts In-Stock

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Corphita

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Native Components

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Overview

Discover the Analog Devices ADG467BR-REEL7, a premium small signal Field Effect Transistor designed for optimal performance in switching applications. Manufactured by Analog Devices, known for their superior quality and reliability, this N-channel FET offers customers unmatched value and benefits. With its innovative technology and high operating temperature of 150°C, this transistor ensures efficient operation and longevity. Ideal for various electronic devices, the ADG467BR-REEL7 is the perfect choice for those seeking top-notch performance and durability in their applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have higher electron mobility and lower resistance compared to P-Channel transistors, making them efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off operations.

Surface Mount: YES

Surface mount capability enables easy and secure installation on PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient layout on circuit boards, optimizing space utilization in electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering points and mechanical strength, enhancing the overall reliability of connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures that the transistor is normally off and requires a positive voltage to turn on, offering precise control in switching applications.

No. of Terminals: 18

Higher number of terminals allow for more complex connections and functionality in circuits, expanding the versatility of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs, making it suitable for compact electronic devices with limited board real estate.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low power consumption, and fast switching speeds, ideal for modern electronic applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance ensures stable performance even in elevated temperature environments, enhancing the reliability of the transistor.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability, making the transistor suitable for a wide range of applications in electronics.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers excellent solderability and corrosion resistance, ensuring secure connections and longevity of the transistor.

Maximum Drain Current (ID): 0.02 A

High maximum drain current allows for efficient power handling and operation, making the transistor suitable for demanding switching tasks.

Maximum Drain-Source On Resistance: 95 ohm

Low drain-source on resistance minimizes power loss and heat generation, increasing the efficiency and overall performance of the transistor.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connection options, allowing for versatile integration in various electronic systems.

Moisture Sensitivity Level (MSL): 3

Moisture sensitivity level 3 indicates moderate sensitivity to moisture exposure, requiring proper handling and storage to maintain the transistor's performance.

Peak Reflow Temperature °C: 240

High peak reflow temperature tolerance allows for robust soldering processes, ensuring secure and reliable connections during assembly.

Technical Specifications

Small Signal Field Effect Transistors (FET) ADG467BR-REEL7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Analog Devices

Specs

Maximum Drain Current (ID):

.02 A

Maximum Drain-Source On Resistance:

95 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G18

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

18

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ADG467BR-REEL7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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