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ADG465BRMZ

Analog Devices

ADG465BRMZ by Analog Devices

ADG465BRMZ by Analog Devices is a Small Signal FET with N/P-Channel, 3 elements in series. It operates in enhancement mode for switching applications. With a max ID of 0.02A and RDS(on) of 115Ω, it's ideal for surface mount designs requiring high performance in a small outline package.

Median Price

$2.490

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 100 parts In-Stock

1+ parts

$1.750

100+ parts

$1.650

1k+ parts

$1.490

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100

$1.750

$1.650

$1.490

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Analog Devices Inc

USA . 9,550 parts In-Stock

1+ parts

$3.230

100+ parts

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$1.590

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9,550

$3.230

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$1.590

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Distributors (In-Stock)

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Digiode

USA . 377 parts In-Stock

1+ parts

$1.662

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377

$1.662

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Vyrian

USA . 679 parts In-Stock

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$1.750

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679

$1.750

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Chip Stock

USA . 3,568 parts In-Stock

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3,568

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Netsource Technology, Inc.

USA . 122 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 117 parts In-Stock

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117

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Distributors (Availability)

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Native Components

USA . 660 parts In-Stock

1+ parts

$0.251

100+ parts

-

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$0.241

660

$0.251

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-

$0.241

Northwest PG Solutions

USA . 43 parts In-Stock

1+ parts

$0.276

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-

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$0.243

43

$0.276

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-

$0.243

Parana Technologies

USA . 24,905 parts In-Stock

1+ parts

$1.034

100+ parts

-

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$0.962

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24,905

$1.034

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$0.962

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IDEA Electronic Components Group

UK . 1,360 parts In-Stock

1+ parts

$1.112

100+ parts

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$1.056

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1,360

$1.112

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$1.056

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Corphita

USA . 900 parts In-Stock

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$1.575

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900

$1.575

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DigiPath Technology Company

USA . 603 parts In-Stock

1+ parts

$1.735

100+ parts

$1.665

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603

$1.735

$1.665

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Glotronic Ltd.

UK . 3,300 parts In-Stock

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3,300

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Perfect Parts

USA . 473 parts In-Stock

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473

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Overview

Enhance your electronic designs with the ADG465BRMZ from Analog Devices. As a leader in the industry, Analog Devices delivers top-quality small signal field effect transistors that excel in switching applications. The N-channel and P-channel configuration, along with the series of 3 elements, provide unmatched performance and reliability. With a maximum operating temperature of 150 °C and a low drain-source on resistance of 115 ohms, this transistor offers exceptional value and benefits to customers looking for high-quality components for their projects. Trust Analog Devices for superior technology and innovation in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the product easy to handle and transport.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Versatile design allows for use in a variety of circuit configurations.

Configuration: SERIES, 3 ELEMENTS

Optimal configuration for switching applications that require multiple transistor elements.

Transistor Application: SWITCHING

Designed specifically for efficient switching operations, making it reliable for various applications.

Surface Mount: YES

Convenient surface mount design allows for easy and secure installation on circuit boards.

Package Shape: RECTANGULAR

Compact rectangular shape saves space in circuit layouts and ensures efficient placement.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Advanced technology offers high performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures without performance degradation, ensuring reliability.

Maximum Drain Current (ID): 0.02 A

Able to handle a moderate drain current, suitable for various small signal applications.

Maximum Drain-Source On Resistance: 115 ohm

Low on-resistance ensures efficient power handling and minimal power loss.

Technical Specifications

Small Signal Field Effect Transistors (FET) ADG465BRMZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Analog Devices

Specs

Configuration:

Maximum Drain Current (ID):

.02 A

Maximum Drain-Source On Resistance:

115 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ADG465BRMZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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