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ADG466BR

Analog Devices

ADG466BR by Analog Devices

ADG466BR by Analog Devices is a N-CHANNEL FET for SWITCHING applications. It has 8 terminals, operates in ENHANCEMENT MODE, with max ID of 0.02A and RDS(on) of 80Ω. The package is RECTANGULAR, GULL WING style, made of PLASTIC/EPOXY material.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 8,542 parts In-Stock

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Digiode

USA . 20 parts In-Stock

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Parana Technologies

USA . 15,175 parts In-Stock

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$1.098

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$1.021

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$1.098

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$1.021

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IDEA Electronic Components Group

UK . 2,074 parts In-Stock

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$1.181

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$1.122

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DigiPath Technology Company

USA . 1,571 parts In-Stock

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$1.842

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$1.769

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Ampacity Inc.

Singapore . 540 parts In-Stock

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$3.050

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Semicontronic

India . 844 parts In-Stock

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$16.050

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$15.649

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$15.568

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844

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AZTECH Wire

Italy . 783 parts In-Stock

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$18.952

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One Stop Electronics

USA . 1,629 parts In-Stock

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$23.050

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Northwest PG Solutions

USA . 2,371 parts In-Stock

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Native Components

USA . 663 parts In-Stock

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Corphita

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Assy Fe

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Overview

Discover the versatile ADG466BR by Analog Devices, a high-quality Small Signal Field Effect Transistor perfect for switching applications. With its N-CHANNEL design and enhancement mode operation, this transistor offers reliable performance in a compact rectangular package. Analog Devices' reputation for excellence ensures that this FET meets the highest standards of quality and durability. Whether you're designing circuitry for automotive, industrial, or consumer electronics, the ADG466BR provides value, efficiency, and precision that will elevate your projects to new heights. Upgrade to Analog Devices and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically offer lower on-resistance and higher conductivity, making them ideal for switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in this particular function.

Surface Mount: YES

Ease of installation and saves space on the PCB, making it suitable for compact electronic designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the board and facilitates better heat dissipation.

Terminal Form: GULL WING

Gull wing terminals make soldering easier and provide a more secure connection, promoting reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over switching operations and reduced power consumption.

No. of Terminals: 8

Having 8 terminals allows for more connections and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves valuable board space and is compatible with modern compact devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high input impedance and low leakage current for improved performance.

Transistor Element Material: SILICON

Silicon material provides high reliability, low cost, and good thermal conductivity for efficient operation.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability and conductivity for better electrical connections.

Maximum Drain Current (ID): 0.02 A

With a maximum drain current of 0.02 A, this FET can handle moderate power levels efficiently.

Maximum Drain-Source On Resistance: 80 ohm

Low drain-source resistance of 80 ohms reduces power losses and improves switching performance.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and facilitates efficient circuit layouts.

Technical Specifications

Small Signal Field Effect Transistors (FET) ADG466BR attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Analog Devices

Specs

Maximum Drain Current (ID):

.02 A

Maximum Drain-Source On Resistance:

80 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ADG466BR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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