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FDR6674A

Fairchild Semiconductor

FDR6674A by Fairchild Semiconductor

FDR6674A by Fairchild Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11.5A Drain Current, 0.008 ohm On Resistance, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has a max power dissipation of 1.8W and can withstand temperatures up to 150°C.

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$2.082

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Overview

Experience superior performance and reliability with the Fairchild Semiconductor FDR6674A, a top-of-the-line Small Signal Field Effect Transistor (FET) designed for switching applications. Manufactured with precision and expertise by Fairchild Semiconductor, this N-CHANNEL transistor boasts a single configuration with a built-in diode, offering unparalleled efficiency and functionality. With a maximum drain current of 11.5 A and a minimum DS breakdown voltage of 30 V, this transistor is guaranteed to deliver exceptional results. Trust in the quality and innovation of Fairchild Semiconductor as you elevate your electronic designs with the FDR6674A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, providing good protection to the internal components.

Polarity or Channel Type: N-CHANNEL

Suitable for various switching applications due to N-channel characteristics.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with built-in diode for ease of use in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring optimal performance.

Surface Mount: YES

Can be easily mounted on PCBs, saving space and facilitating mass production.

Minimum DS Breakdown Voltage: 30 V

Capable of handling high voltages, suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 11.5 A

High maximum drain current capacity allows for robust and efficient operation.

Maximum Power Dissipation (Abs): 1.8 W

Efficient power dissipation capability, ensuring stable performance under varying load conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for use in demanding environments.

Maximum Drain-Source On Resistance: 0.008 ohm

Low on-resistance results in minimal power loss and improved efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDR6674A attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

11.5 A

Maximum Drain Current (ID):

11.5 A

Maximum Drain-Source On Resistance:

.008 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDR6674A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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