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DMG6301UDW-7

Diodes Incorporated

DMG6301UDW-7 by Diodes Incorporated

DMG6301UDW-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 25V, max drain current of 0.24A, and operating temperature range from -55 to 150°C. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount configurations.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Mouser Electronics

USA . 94 parts In-Stock

1+ parts

$0.350

100+ parts

$0.135

1k+ parts

$0.089

10k+ parts

$0.049

94

$0.350

$0.135

$0.089

$0.049

DigiKey

USA . 40 parts In-Stock

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$0.350

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$0.134

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$0.088

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$0.054

40

$0.350

$0.134

$0.088

$0.054

Arrow

USA . 6,000 parts In-Stock

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$0.043

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Verical

USA . 6,000 parts In-Stock

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$0.042

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Avnet

USA . 3,000 parts In-Stock

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Flip Electronics

USA . 110,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,249 parts In-Stock

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Bristol Electronics

USA . 2,249 parts In-Stock

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$0.141

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$0.085

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$0.056

2,249

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$0.056

Dan-Mar Components

USA . 1,549 parts In-Stock

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Native Components

USA . 113 parts In-Stock

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$10.124

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Northwest PG Solutions

USA . 1,811 parts In-Stock

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$11.136

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$10.023

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Kepictronics

USA . 29,134 parts In-Stock

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Perfect Parts

USA . 16,800 parts In-Stock

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Lixinc

USA . 4,121 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Overview

Discover the cutting-edge DMG6301UDW-7 by Diodes Incorporated, a top-tier manufacturer known for its high-quality products. This N-channel small signal FET offers exceptional performance in switching applications with its innovative design featuring two elements with built-in diode. With a maximum power dissipation of 0.37W and a minimum DS breakdown voltage of 25V, this FET guarantees reliable operation in various conditions. Enhancing efficiency and functionality, this FET is the perfect choice for customers seeking top-notch quality and value in their electronic components. Elevate your projects with the superior performance of the DMG6301UDW-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the transistor suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and better performance, making this transistor efficient for switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for more flexibility and functionality in circuit design, making the product versatile.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in these scenarios.

Surface Mount: YES

Can be easily mounted on a surface, saving space and simplifying the assembly process.

Minimum DS Breakdown Voltage: 25 V

Suitable for applications requiring voltage protection, ensuring the safety and reliability of the circuit.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a PCB, maximizing the design layout.

Maximum Power Dissipation (Abs): 0.37 W

With a high power dissipation capacity, the transistor can handle heat well, ensuring stable operation under varying conditions.

Maximum Drain Current (ID): 0.24 A

Capable of handling moderate current levels, suitable for various switching applications.

Maximum Drain-Source On Resistance: 4 ohm

Low on-resistance ensures efficient power handling and minimal power loss in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG6301UDW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (ID):

.24 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMG6301UDW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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