Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
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Small Signal Field Effect Transistors (FET) DMG6602SVTQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Additional Features:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Reference Standard:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
DMG6602SVTQ-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
2N7002
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
LM107H/883C
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Wideband: NO;
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BSS138NH6327XTSA2
Infineon Technologies
BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148WT
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM7805CT
Onsemi
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
2N2222A
Allegro MicroSystems
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
Microsemi
NE555/D
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
EU2B-YS2J03C
Idec
ROTARY SWITCH;
Fairchild Semiconductor
TDK
RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); No. of Phases: 1; No. of Elements: 1; Maximum Output Current: .2 A;
LM107H/883
Linear Technology
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
Itt Components
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .005 us; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Non Repetitive Peak Forward Current: 1 A;
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
FDG6332C
The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.
IRLML6302TRPBF
IRLML6302TRPBF by Infineon is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.78A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This small outline transistor has a built-in diode and matte tin finish for surface mount installation.
BSS138TA
Diodes Incorporated
BSS138TA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. It has a 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. With a PLASTIC/EPOXY body and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 150°C.
NDS7002A-F169
NDS7002A-F169 by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a 60V min DS breakdown voltage, 0.3W max power dissipation, and 150°C max operating temperature. With a built-in diode and Gull Wing terminals, it offers efficient enhancement mode operation in a compact package.
BSS123LT1
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JEDEC-95 Code: TO-236AB; Terminal Finish: Tin/Lead (Sn/Pb);
2N7002KT7G
2N7002KT7G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.32A ID, and 1.6 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features include PLASTIC/EPOXY body, GULL WING terminals, and -55 to 150 °C temp range.
2N7002T
Secos
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; No. of Elements: 1; Maximum Drain Current (ID): .115 A;
2N7002CK,215
NXP Semiconductors
NXP Semiconductors' 2N7002CK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.35W.
FDC6333C
FDC6333C by Onsemi is a small signal field effect transistor (FET) with N-channel and P-channel polarity. It has a min DS breakdown voltage of 30V and max drain current of 2.5A, making it suitable for switching applications. This surface mount transistor operates in enhancement mode and has a max operating temperature of 150°C.
2N7000G
2N7000G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Widely used in enhancement mode, it has a max power dissipation of 0.35W. Ideal for applications requiring small signal amplification and switching functions.
FDN304PZ
FDN304PZ by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a max drain current of 2.4A and 0.052 ohm on-resistance, operating in enhancement mode at up to 150°C. This small outline transistor with gull wing terminals is designed for surface mount configurations.
SI2305CDS-T1-GE3
Vishay Intertechnology
SI2305CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 8V DS breakdown voltage and 5.8A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. With a package style of small outline and dual terminal position, it offers efficient performance in various electronic circuits.
MMBF170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: GULL WING; Maximum Power Dissipation Ambient: .55 W;
IRF6216TRPBF
Infineon's IRF6216TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 150V DS Breakdown Voltage, 2.2A ID, and 0.24 ohm RDS(on). With ENHANCEMENT MODE operation, this RECTANGULAR package with GULL WING terminals is ideal for surface mount designs.
2V7002KT1G
2V7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.38A Drain Current, and 1.6ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C with a max power dissipation of 0.42W.
BSS138PW,115
NXP Semiconductors' BSS138PW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for switching applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in enhancement mode. This small outline transistor has GULL WING terminals and meets AEC-Q101 standards for automotive use.
2N7000
Vishay Intertechnology's 2N7000 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.2A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.4W. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 150 °C.
SI2308BDS-T1-GE3
SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.
PMV65XPEAR
Nexperia
PMV65XPEAR by Nexperia is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.8A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. AEC-Q101 & IEC-60134 compliant, it operates in ENHANCEMENT MODE with 0.078 ohm RDS(on).
SBSS138LT1
SBSS138LT1 by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5Ω RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals.
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DMG6601LVT-7
DMG6601LVT-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, ideal for switching applications. It features 30V DS breakdown voltage, 0.055 ohm max RDS(on), and 3.8A max drain current. With AEC-Q101 compliance, it's suitable for automotive electronics requiring high reliability in compact designs.
DMG6602SVTQ-7
DMG6602SVTQ-7 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements, built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.06 ohm RDS(on), and 2.7A ID max. Ideal for AEC-Q101 compliant automotive electronics due to its -55 to 150°C operating range and compact SOT package design.
DMG6601LVT-7-01
DMG6601LVT-7-01 by Diodes Inc. is a Small Signal FET with N/P-channel, 2 elements & built-in diode for switching applications. Features include 30V DS breakdown voltage, 0.055 ohm RDS(on), and 3.8A ID max. Suitable for AEC-Q101 standards in automotive electronics due to its MOSFET technology and dual-terminal configuration.
DMG6402LVT-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Terminal Finish: MATTE TIN; Maximum Drain Current (Abs) (ID): 6 A;
DMG6301UDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .37 W; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
DMG6301UDW-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .37 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
DMG6302UDW-13
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMG6302UDW-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
DMG6402LVT-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
DMG6968UDM-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .85 W; Additional Features: HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMG6968UQ-7
Small Signal Field-Effect Transistors; Configuration: SINGLE; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 6.5 A; Terminal Finish: MATTE TIN;
DMG6968UTS-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Additional Features: HIGH RELIABILITY; Maximum Drain Current (ID): 5.2 A;
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