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DMG6402LVT-7

Diodes Incorporated

DMG6402LVT-7 by Diodes Incorporated

DMG6402LVT-7 by Diodes Inc. is a N-CHANNEL FET with 6A max drain current, 0.03 ohm max on resistance, and 1.75W power dissipation. Ideal for applications requiring high current handling in small outline packages at up to 150°C operating temperature.

Median Price

$0.162

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,642 parts In-Stock

1+ parts

$0.433

100+ parts

$0.167

1k+ parts

$0.110

10k+ parts

-

1,642

$0.433

$0.167

$0.110

-

Mouser Electronics

USA . 3,870 parts In-Stock

1+ parts

$0.480

100+ parts

$0.186

1k+ parts

$0.167

10k+ parts

-

3,870

$0.480

$0.186

$0.167

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DigiKey

USA . 177 parts In-Stock

1+ parts

$0.480

100+ parts

$0.186

1k+ parts

$0.124

10k+ parts

-

177

$0.480

$0.186

$0.124

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Element14

Singapore . 8,370 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

$0.086

10k+ parts

$0.079

8,370

-

$0.130

$0.086

$0.079

Farnell

UK . 5,645 parts In-Stock

1+ parts

-

100+ parts

$0.089

1k+ parts

$0.071

10k+ parts

$0.049

5,645

-

$0.089

$0.071

$0.049

Arrow

USA . 465 parts In-Stock

1+ parts

-

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$0.107

10k+ parts

$0.068

465

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$0.107

$0.068

Verical

USA . 465 parts In-Stock

1+ parts

-

100+ parts

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$0.162

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465

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-

$0.162

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 400 parts In-Stock

1+ parts

$0.094

100+ parts

-

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400

$0.094

-

-

-

TME

Poland . 306 parts In-Stock

1+ parts

$0.450

100+ parts

$0.169

1k+ parts

$0.109

10k+ parts

$0.084

306

$0.450

$0.169

$0.109

$0.084

Vyrian

USA . 106,882 parts In-Stock

1+ parts

-

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106,882

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IBS Electronics

USA . 90,000 parts In-Stock

1+ parts

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$0.059

90,000

-

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$0.059

Chip Stock

USA . 80,000 parts In-Stock

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80,000

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NAC Semi

USA . 54,000 parts In-Stock

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$0.072

54,000

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$0.072

Semtec, LLC

USA . 2,838 parts In-Stock

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2,838

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Distributors (Availability)

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

$0.088

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500

$0.092

-

$0.088

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Argo Parts USA

USA . 1,499 parts In-Stock

1+ parts

$0.094

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1k+ parts

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10k+ parts

$0.091

1,499

$0.094

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-

$0.091

Ampacity Inc.

Singapore . 106,419 parts In-Stock

1+ parts

$0.098

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106,419

$0.098

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Continental Prestige Electronics

USA . 8,570 parts In-Stock

1+ parts

$0.264

100+ parts

$0.125

1k+ parts

$0.067

10k+ parts

$0.050

8,570

$0.264

$0.125

$0.067

$0.050

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 66,540 parts In-Stock

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66,540

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Lixinc

USA . 17,172 parts In-Stock

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17,172

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Perfect Parts

USA . 14,782 parts In-Stock

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14,782

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Infinite Electronics LLP (Excess)

. 12,008 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

1+ parts

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$0.080

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6,000

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$0.080

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iodParts Technologies Inc.

India . 3,100 parts In-Stock

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3,100

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Overview

Unlock the potential of your electronic devices with the DMG6402LVT-7 Small Signal Field Effect Transistor by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated delivers reliability and performance in every product. Ideal for a wide range of applications, this N-CHANNEL FET offers a single configuration and surface mount capability for easy installation. With a maximum drain current of 6A and a power dissipation of 1.75W, this transistor provides efficient power management and improved device functionality. Upgrade your electronics with the DMG6402LVT-7 and experience seamless operation and enhanced performance like never before.

Feature Benefit Bullets

Polarity: N-CHANNEL

N-channel FETs are more commonly used and have lower ON resistance, making them a preferred choice for a wide range of applications.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures easy integration into a system.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Drain Current (ID): 6 A

High maximum drain current rating of 6A allows for the transistor to handle higher power loads, making it suitable for various applications.

Maximum Power Dissipation: 1.75 W

With a maximum power dissipation of 1.75W, this FET can safely handle power without overheating, ensuring reliability in operation.

Package Style: SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for compact designs where space is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency and reliability, making the transistor suitable for demanding applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance even in harsh environments or high-temperature conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures a strong connection, enhancing the reliability of the transistor.

Maximum Drain-Source On Resistance: 0.03 ohm

Low drain-source ON resistance of 0.03 ohm ensures minimal power loss and efficient operation of the transistor.

Maximum Time At Peak Reflow Temperature: 30s

Max time of 30s at peak reflow temperature ensures proper soldering and prevents damage to the transistor during manufacturing processes.

Peak Reflow Temperature: 260C

High peak reflow temperature of 260°C allows for reliable soldering and ensures the durability of the transistor in various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMG6402LVT-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

6 A

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.03 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

DMG6402LVT-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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