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SI3433BDV-T1-GE3

Vishay Intertechnology

SI3433BDV-T1-GE3 by Vishay Intertechnology

SI3433BDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 4.3A Drain Current, and 0.042ohm On Resistance. Ideal for small signal applications in electronics due to its SINGLE configuration with built-in diode and ENHANCEMENT MODE operation. Package style is SMALL OUTLINE, suitable for surface mount designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,887 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Corohmni

South Africa . 284 parts In-Stock

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$0.955

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284

$0.955

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Aztec Data Supply Inc.

USA . 50 parts In-Stock

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$1.593

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$1.593

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AZTECH Wire

Italy . 387 parts In-Stock

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$5.123

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387

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Ampacity Inc.

Singapore . 602 parts In-Stock

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$47.050

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602

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Kepictronics

USA . 57,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,286 parts In-Stock

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Argo Parts USA

USA . 1,355 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Upgrade your electronic devices with the SI3433BDV-T1-GE3 Small Signal Field Effect Transistor by Vishay Intertechnology. Known for their high-quality components, Vishay delivers reliable and efficient solutions for a wide range of applications. This P-Channel transistor boasts a single configuration with a built-in diode, making it a versatile choice for your circuit design needs. With a maximum drain current of 4.3 A and a low on-resistance, this transistor offers exceptional performance and value to customers looking for superior power management solutions. Experience the benefits of Vishay's expertise in semiconductor technology and elevate your projects with the SI3433BDV-T1-GE3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, extending the lifespan of the product.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow and control in the specified direction, enhancing performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor, saving space and reducing component count.

Minimum DS Breakdown Voltage: 20 V

Can handle voltages up to 20V, making it suitable for a variety of low to moderate voltage applications.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving assembly time and effort.

Maximum Drain Current (Abs) (ID): 4.3 A

Capable of handling high current loads, making it versatile for various applications requiring power.

Maximum Power Dissipation (Abs): 2 W

Efficiently dissipates heat generated during operation, ensuring stable performance under heavy loads.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes advanced MOSFET technology for high efficiency and fast switching, improving overall performance.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, allowing reliable operation in demanding environmental conditions.

Maximum Drain-Source On Resistance: 0.042 ohm

Offers low resistance for minimal power loss and efficient current flow, enhancing overall efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3433BDV-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

4.3 A

Maximum Drain Current (ID):

4.3 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

PURE MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SI3433BDV-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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