Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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SI3460DDV-T1-GE3 by Vishay Intertechnology is a N-channel FET with 20V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With max drain current of 7.9A and low on-resistance of 0.028 ohm, it offers high performance in small outline package style.
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$0.710
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DigiKey
$0.142
Chip1Stop
$0.105
TTI Europe
$0.095
TTI
$0.089
Arrow
$0.139
Verical
Farnell
$0.190
$0.132
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Element14
$0.378
$0.258
$0.253
Maritex
$0.401
$0.361
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Nova Conductors
$0.445
Bristol Electronics
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TME
$0.660
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$0.134
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LIBRA Elektronik GmbH
Ampacity Inc.
$0.045
Semicontronic
$0.044
Corohmni
$0.250
Argo Parts USA
$0.270
$0.262
Netroflash
Aztec Data Supply Inc.
$0.600
Advanced Electronics
$2.205
$2.007
$1.808
Perfect Parts
Authorized Procurement Solutions
Continental Prestige Electronics
$0.240
$0.209
Kepictronics
The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor.
N-channel transistors typically have better performance characteristics and higher efficiency compared to P-channel transistors, making this product a good choice for various applications.
The built-in diode allows for easy circuit design and integration, simplifying the overall setup of the system.
Designed specifically for switching applications, this transistor offers fast response times and efficient operation in switching circuits.
Being surface mountable makes this transistor suitable for compact and space-constrained designs, providing flexibility in placement on circuit boards.
The minimum breakdown voltage of 20V ensures reliable operation and protection against overvoltage conditions in the circuit.
The rectangular package shape allows for easy placement and mounting on PCBs, accommodating efficient circuit layout designs.
With a maximum power dissipation of 2.7W, this transistor can handle high power levels, making it suitable for demanding applications.
Metal-oxide semiconductor technology provides high performance and reliability, ensuring stable operation in various operating conditions.
The high maximum operating temperature of 150°C allows for reliable performance in elevated temperature environments.
Silicon is a common and reliable material for transistor elements, ensuring consistent and stable electrical characteristics.
With a high maximum drain current of 7.9A, this transistor can handle heavy loads and high current applications with ease.
The low drain-source on resistance of 0.028 ohm results in minimal power loss and improved efficiency in the transistor's conduction state.
The low feedback capacitance of 41pF reduces the chance of signal distortion and interference, enhancing the overall performance of the transistor in high-frequency applications.
Small Signal Field Effect Transistors (FET) SI3460DDV-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SI3460DDV-T1-GE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - New Solder Plating Site 18/Apr/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
BSS138
Weitron Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;
SMBJ18CA
STMicroelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SS14
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
ULN-2803A
Sprague Electric
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Temperature Grade: OTHER; Terminal Form: THROUGH-HOLE; No. of Terminals: 18; Package Code: DIP; Package Shape: RECTANGULAR;
Taitron Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3.5 ohm; Maximum Drain Current (ID): .2 A; Peak Reflow Temperature (C): NOT SPECIFIED;
Microsemi
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
CRCW06030000Z0EAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.
1N4148
Comchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
International Semiconductor
ISO1050DUBR
Texas Instruments
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
BSS123-7-F
Diodes Incorporated
BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
Bytesonic Electronics
Itt Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
2N2222A
Shanghai Lunsure Electronic Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NTZD3154NT1G
NTZD3154NT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It has a max drain current of 0.54A, on-resistance of 0.55 ohm, and breakdown voltage of 20V. With a small outline package style and operating temperature up to 150°C, it offers efficient performance in various electronic circuits.
FDN327N
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .46 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: .07 ohm;
ZXMN10A07FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; JESD-30 Code: R-PDSO-G3; Maximum Time At Peak Reflow Temperature (s): 40;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
BSS123
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 4 pF; No. of Terminals: 3;
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
SBSS138LT1
SBSS138LT1 by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5Ω RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;
BC548B
Bharat Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
2N7002BKS,115
NXP Semiconductors
NXP Semiconductors' 2N7002BKS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A ID. Ideal for switching applications, it operates in enhancement mode with 1.6 ohm RDS(on). The small outline package features gull wing terminals and can withstand temperatures from -55 to 150 °C.
2N7002T
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
FDS4672A
FDS4672A by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It has 11A Drain Current, 0.013 ohm On Resistance, and operates at max temp of 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
FDC6420C
FDC6420C by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 3A, on-resistance of 0.07 ohm, and operates in enhancement mode for switching applications. This MOSFET comes in a small outline package with matte tin finish, suitable for surface mount assembly at up to 260°C peak reflow temp.
Dc Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Terminal Form: GULL WING;
BSS123_NL
Fairchild Semiconductor's BSS123_NL is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. The PLASTIC/EPOXY package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
SI2333DDS-T1-GE3
SI2333DDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 12V breakdown voltage and 6A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 1.7W. The transistor features a small outline package style and can withstand temperatures from -55 to 150°C.
2N7000
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Minimum DS Breakdown Voltage: 60 V; No. of Elements: 1;
2N7002-T1-E3
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Style (Meter): CYLINDRICAL; Terminal Position: BOTTOM;
NDS331N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
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SI3433CDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; JEDEC-95 Code: MO-193AA; Package Body Material: PLASTIC/EPOXY;
SI3440DV-T1-E3
SI3440DV-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 1.2A and 0.375 ohm RDS(on), it can handle up to 1.14W power dissipation at temperatures ranging from -55 to 150°C.
SI3437DV-T1-GE3
SI3437DV-T1-GE3 by Vishay Intertechnology is a P-channel FET with 150V breakdown voltage, 1.4A drain current, and 0.75 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 3.2W in a small outline package.
SI3476DV-T1-GE3
Vishay Intertechnology's SI3476DV-T1-GE3 is a N-channel FET with 80V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 4.6A max drain current, and 0.093 ohm max on-resistance. Operating in enhancement mode, it has a peak reflow temp of 260°C and -55 to 150°C operating range.
SI3440ADV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Maximum Drain Current (ID): 2.2 A; Maximum Operating Temperature: 150 Cel;
SI3493DDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI3473CDV-T1-GE3
SI3473CDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 12V DS Breakdown Voltage and 8A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.022 ohm On Resistance and 520pF Feedback Capacitance.
SI3443DV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain-Source On Resistance: .065 ohm; Terminal Position: DUAL;
SI3421DV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
SI3477DV-T1-GE3
SI3477DV-T1-GE3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 12V. It is used for switching applications and has a max drain current of 8A. This surface mount transistor operates in enhancement mode and has a max power dissipation of 4.2W.
SI3445DV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Qualification: Not Qualified; Terminal Position: DUAL;
SI3459BDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; No. of Terminals: 6; Maximum Drain Current (ID): .0022 A;
SI3415A-TP
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): 10;
SI3440DV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.14 W; JESD-609 Code: e3; Terminal Form: GULL WING;
SI3458BDV-T1-E3
SI3458BDV-T1-E3 by Vishay Intertechnology is a N-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications, operates in enhancement mode, and has a max drain current of 4.1A.
SI3410DV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
SI3474DV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 14 pF;
SI3440ADV-T1-BE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Maximum Feedback Capacitance (Crss): 3 pF; Moisture Sensitivity Level (MSL): 1;
SI3443DDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Peak Reflow Temperature (C): 260; Maximum Feedback Capacitance (Crss): 111 pF;
SI3460DDV-T1-BE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): 30;
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