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SI3460DDV-T1-BE3

Vishay Intertechnology

SI3460DDV-T1-BE3 by Vishay Intertechnology

SI3460DDV-T1-BE3 by Vishay Intertechnology is a N-CHANNEL FET with 20V DS Breakdown Voltage and 7.9A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.028 ohm On Resistance. This SMALL OUTLINE transistor has a max power dissipation of 2.7W and can withstand temperatures from -55 to 150°C.

Median Price

$0.456

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 79,742 parts In-Stock

1+ parts

$0.660

100+ parts

$0.263

1k+ parts

$0.162

10k+ parts

$0.131

79,742

$0.660

$0.263

$0.162

$0.131

DigiKey

USA . 2,563 parts In-Stock

1+ parts

$0.710

100+ parts

$0.281

1k+ parts

$0.191

10k+ parts

$0.142

2,563

$0.710

$0.281

$0.191

$0.142

TTI

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.082

21,000

-

-

-

$0.082

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.251

3,000

-

-

-

$0.251

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 71,720 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

71,720

$0.088

-

-

-

Bristol Electronics

USA . 2,900 parts In-Stock

1+ parts

$0.528

100+ parts

$0.264

1k+ parts

$0.106

10k+ parts

-

2,900

$0.528

$0.264

$0.106

-

Chip Stock

USA . 21,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,500

-

-

-

-

Dan-Mar Components

USA . 5,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,900

-

-

-

-

Overview

Enhance your electronic devices with the SI3460DDV-T1-BE3 by Vishay Intertechnology, a top-quality small signal field-effect transistor perfect for switching applications. With its N-channel configuration and built-in diode, this transistor offers superior performance and reliability. Experience the benefits of enhancement mode operation, high power dissipation, and low drain-source resistance. Trust in Vishay Intertechnology's reputation for excellence in semiconductor technology and elevate your projects with the SI3460DDV-T1-BE3 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors generally have better conductivity and efficiency compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for simplified circuit design and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring quick and efficient performance.

Maximum Drain Current (ID): 7.9 A

High maximum drain current allows for handling of larger loads and higher power applications.

Maximum Power Dissipation (Abs): 2.7 W

Higher power dissipation capability ensures the transistor can handle heat generated during operation.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to be used in various environmental conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3460DDV-T1-BE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

7.9 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

41 pF

JEDEC-95 Code:

MO-193AA

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI3460DDV-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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