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SI3458BDV-T1-E3

Vishay Intertechnology

SI3458BDV-T1-E3 by Vishay Intertechnology

SI3458BDV-T1-E3 by Vishay Intertechnology is a N-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications, operates in enhancement mode, and has a max drain current of 4.1A.

Median Price

$0.295

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 11 parts In-Stock

1+ parts

$1.390

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-

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11

$1.390

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Mouser Electronics

USA . 60,439 parts In-Stock

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$0.295

60,439

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$0.295

Avnet

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.268

3,000

-

-

-

$0.268

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$0.386

100+ parts

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19

$0.386

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Vyrian

USA . 22,725 parts In-Stock

1+ parts

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22,725

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Inventory MP

USA . 80 parts In-Stock

1+ parts

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80

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Bristol Electronics

USA . 80 parts In-Stock

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80

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Prism Electronics

USA . 24 parts In-Stock

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 22,971 parts In-Stock

1+ parts

$0.246

100+ parts

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22,971

$0.246

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Semicontronic

India . 22,749 parts In-Stock

1+ parts

$0.246

100+ parts

$0.240

1k+ parts

$0.239

10k+ parts

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22,749

$0.246

$0.240

$0.239

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.379

100+ parts

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1k+ parts

$0.364

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100

$0.379

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$0.364

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Argo Parts USA

USA . 2,422 parts In-Stock

1+ parts

$0.386

100+ parts

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1k+ parts

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10k+ parts

$0.375

2,422

$0.386

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-

$0.375

Continental Prestige Electronics

USA . 553 parts In-Stock

1+ parts

$0.386

100+ parts

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1k+ parts

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10k+ parts

$0.379

553

$0.386

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-

$0.379

Corohmni

South Africa . 997 parts In-Stock

1+ parts

$0.482

100+ parts

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997

$0.482

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Aztec Data Supply Inc.

USA . 308 parts In-Stock

1+ parts

$0.520

100+ parts

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308

$0.520

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Overview

Experience the power of Vishay Intertechnology with the SI3458BDV-T1-E3 Small Signal Field Effect Transistor. Designed for switching applications, this N-CHANNEL transistor offers a breakthrough in performance and reliability. With a minimum DS Breakdown Voltage of 60V and maximum Drain Current of 4.1A, it delivers high efficiency and durability. Its small outline package and gull wing terminals make it easy to integrate into any design. Trust Vishay Intertechnology for quality and excellence in every component. Choose the SI3458BDV-T1-E3 and unlock the potential of your next project.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY. This material provides durability and resistance to heat, making the product suitable for a variety of applications.

Polarity or Channel Type:

N-CHANNEL. This type of channel allows for efficient current flow in one direction, enhancing the overall performance of the product.

Configuration:

SINGLE WITH BUILT-IN DIODE. The built-in diode simplifies circuit design and offers protection against reverse current flow, adding versatility to the product.

Transistor Application:

SWITCHING. Designed for switching applications, this product enables fast and efficient control of electronic circuits, making it ideal for various switching systems.

Surface Mount:

YES. With surface mount capability, this product can be easily mounted onto circuit boards, saving space and allowing for greater integration in electronic devices.

Minimum DS Breakdown Voltage:

60 V. This high voltage tolerance ensures reliable operation and protection against electrical surges, increasing the product's suitability for demanding environments.

Package Shape:

RECTANGULAR. The rectangular shape of the package facilitates efficient placement and integration into circuit designs, optimizing space utilization.

Terminal Form:

GULL WING. The gull-wing terminal form enables secure and reliable connections with other components, ensuring stable performance and ease of installation.

Operating Mode:

ENHANCEMENT MODE. The enhancement mode operation allows for precise control of the transistor's conductance, resulting in improved efficiency and performance.

Maximum Drain Current (Abs) (ID):

4.1 A. With a high maximum drain current capacity, this product can handle significant current loads, making it suitable for power-intensive applications.

No. of Terminals:

6. The six terminals provide multiple connection points, enabling versatile circuit configurations and facilitating complex electronic designs.

Maximum Power Dissipation (Abs):

3.3 W. This high power dissipation capability ensures that the product can withstand and dissipate heat effectively, contributing to its reliability and longevity.

Package Style (Meter):

SMALL OUTLINE. The small outline package style allows for compact integration into circuit layouts, enabling space-saving designs and enhancing overall system efficiency.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR. The metal-oxide semiconductor technology employed in this product provides excellent performance in terms of power efficiency, reliability, and speed.

Maximum Operating Temperature:

150 °C. The high maximum operating temperature ensures the product's stability and performance even under challenging thermal conditions.

Transistor Element Material:

SILICON. Silicon is widely recognized for its excellent electronic properties, ensuring that this product exhibits superior conductivity and reliability.

Minimum Operating Temperature:

55 °C. With a low minimum operating temperature range, this product can reliably operate in extreme cold environments, expanding its range of application possibilities.

Terminal Finish:

Pure Matte Tin (Sn). The pure matte tin terminal finish offers excellent solderability and corrosion resistance, ensuring secure and durable connections in various operating conditions.

Maximum Drain Current (ID):

3.2 A. The high maximum drain current capacity indicates that this product can handle significant current loads, making it ideal for various power-related applications.

Maximum Drain-Source On Resistance:

0.1 ohm. This low drain-source resistance reduces power losses and enhances efficiency, making the product well-suited for demanding switching applications.

Terminal Position:

DUAL. The dual terminal position provides flexibility in circuit connections, allowing for convenient installation and compatibility with a wide range of system designs.

Maximum Time At Peak Reflow Temperature (s):

30. This specification indicates the maximum time the product can withstand peak reflow temperatures, ensuring the reliability of solder joints during manufacturing processes.

Peak Reflow Temperature °C:

260. With a high peak reflow temperature tolerance, this product can withstand the demanding reflow soldering process, ensuring manufacturing efficiency and reliability.

Maximum Feedback Capacitance (Crss):

20 pF. The low feedback capacitance minimizes signal loss and enables efficient switching behavior, contributing to enhanced performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3458BDV-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

4.1 A

Maximum Drain Current (ID):

3.2 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Pure Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI3458BDV-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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