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SI3458BDV-T1-BE3

Vishay Intertechnology

SI3458BDV-T1-BE3 by Vishay Intertechnology

Vishay Intertechnology SI3458BDV-T1-BE3 is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a single configuration with built-in diode and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 3.3W and max drain current of 3.2A at -55 to 150°C temperature range.

Median Price

$0.418

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,490 parts In-Stock

1+ parts

$0.870

100+ parts

$0.523

1k+ parts

$0.372

10k+ parts

-

2,490

$0.870

$0.523

$0.372

-

Mouser Electronics

USA . 22,026 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.294

22,026

-

-

-

$0.294

TTI

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.418

6,000

-

-

-

$0.418

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 42,844 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

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42,844

$0.294

-

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Bristol Electronics

USA . 20,723 parts In-Stock

1+ parts

$1.254

100+ parts

$0.502

1k+ parts

$0.351

10k+ parts

$0.326

20,723

$1.254

$0.502

$0.351

$0.326

Dan-Mar Components

USA . 20,723 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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20,723

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Overview

Discover the perfect solution for your switching needs with the SI3458BDV-T1-BE3 by Vishay Intertechnology. This high-quality N-channel small signal field-effect transistor offers enhanced performance and reliability, making it ideal for a variety of applications. With a maximum drain current of 3.2A and a low on-resistance of 0.1 ohm, this transistor provides exceptional value and efficiency. Trust Vishay Intertechnology for superior technology that delivers outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside the package.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Enables easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 60 V

Provides a high breakdown voltage for reliable operation in various applications.

Maximum Drain Current (ID): 3.2 A

Capable of handling high current loads in circuits.

Maximum Drain-Source On Resistance: 0.1 ohm

Low on resistance allows for efficient conduction in the transistor.

Maximum Power Dissipation (Abs): 3.3 W

Can dissipate heat efficiently under high power conditions.

Maximum Operating Temperature: 150 °C

Can operate under high temperature environments without performance degradation.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3458BDV-T1-BE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3.2 A

Maximum Drain-Source On Resistance:

.1 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI3458BDV-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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