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PMBFJ620,115

NXP Semiconductors

PMBFJ620,115 by NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .19 W; Maximum Feedback Capacitance (Crss): 2.5 pF; Minimum DS Breakdown Voltage: 25 V;

Median Price

$0.290

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 128 parts In-Stock

1+ parts

$0.290

100+ parts

$0.273

1k+ parts

$0.247

10k+ parts

-

128

$0.290

$0.273

$0.247

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,379 parts In-Stock

1+ parts

$0.276

100+ parts

-

1k+ parts

-

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2,379

$0.276

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

1+ parts

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15,000

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Vyrian

USA . 7,150 parts In-Stock

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7,150

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Anansix

USA . 965 parts In-Stock

1+ parts

-

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965

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 128 parts In-Stock

1+ parts

$0.246

100+ parts

-

1k+ parts

-

10k+ parts

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128

$0.246

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Corphita

USA . 1,203 parts In-Stock

1+ parts

$0.261

100+ parts

-

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1,203

$0.261

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Component Stockers USA

USA . 2,365 parts In-Stock

1+ parts

$0.280

100+ parts

$0.260

1k+ parts

$0.240

10k+ parts

-

2,365

$0.280

$0.260

$0.240

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AZTECH Wire

Italy . 100 parts In-Stock

1+ parts

$9.320

100+ parts

-

1k+ parts

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100

$9.320

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Perfect Parts

USA . 3,343 parts In-Stock

1+ parts

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3,343

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UNI Independent Distributors

Spain . 1,647 parts In-Stock

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1,647

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Microchip USA

USA . 221 parts In-Stock

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221

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Technical Specifications

Small Signal Field Effect Transistors (FET) PMBFJ620,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.5 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PMBFJ620,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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