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PMV45EN,215

NXP Semiconductors

PMV45EN,215 by NXP Semiconductors

PMV45EN,215 by NXP Semiconductors is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.4A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2W and can withstand temperatures up to 150°C.

Median Price

$214.001

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

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$214.001

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Vyrian

USA . 6,215 parts In-Stock

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Rebound Electronics

UK . 4,234 parts In-Stock

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Extreme Components

USA . 2,657 parts In-Stock

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Anansix

USA . 2,133 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 1,975 parts In-Stock

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Digiode

USA . 1,071 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,941 parts In-Stock

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$0.690

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$0.690

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Corohmni

South Africa . 1,565 parts In-Stock

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$0.930

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AZTECH Wire

Italy . 763 parts In-Stock

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$16.192

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Ampacity Inc.

Singapore . 417 parts In-Stock

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$20.050

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One Stop Electronics

USA . 175 parts In-Stock

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$40.050

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Semicontronic

India . 1,630 parts In-Stock

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$61.050

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$59.524

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$59.218

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Continental Prestige Electronics

USA . 164 parts In-Stock

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$214.001

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$209.721

164

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Perfect Parts

USA . 28,376 parts In-Stock

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Kepictronics

USA . 12,500 parts In-Stock

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UNI Independent Distributors

Spain . 7,672 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,391 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$209.721

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$203.301

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$199.021

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$199.021

A-Z Elektronik GmbH

Germany . 1,769 parts In-Stock

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Corphita

USA . 1,766 parts In-Stock

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Overview

Enhance your electronic projects with the PMV45EN,215 from NXP Semiconductors! This small signal field-effect transistor offers high-quality performance in a compact package, making it ideal for switching applications. With a maximum drain current of 5.4A and a low on-resistance of just 0.042 ohms, this transistor provides reliable power control. Whether you're a DIY enthusiast or a professional engineer, the PMV45EN,215 is sure to streamline your designs and elevate your creations. Experience the superior quality and value that NXP Semiconductors brings to every product, and take your projects to the next level with the PMV45EN,215.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and insulation for the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors generally have better performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can protect against reverse voltage.

Transistor Application: SWITCHING

Ideal for applications where the transistor needs to switch on/off quickly and efficiently.

Surface Mount: YES

Easily mountable on circuit boards, saving space and making assembly easier.

Minimum DS Breakdown Voltage: 30 V

Can handle higher voltages safely, suitable for a variety of applications.

Maximum Drain Current (Abs) (ID): 5.4 A

Capable of handling high currents, making it versatile for different uses.

Maximum Power Dissipation (Abs): 2 W

Efficiently dissipates heat to prevent overheating and ensure reliability.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, suitable for various environments.

Maximum Drain-Source On Resistance: 0.042 ohm

Low on-resistance leads to less power loss and better efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV45EN,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

5.4 A

Maximum Drain Current (ID):

5.4 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV45EN,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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