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PMV48XP,215

NXP Semiconductors

PMV48XP,215 by NXP Semiconductors

PMV48XP,215 by NXP Semiconductors is a P-CHANNEL small signal FET with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 3.5A.

Median Price

$0.137

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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TTI

USA . 159,000 parts In-Stock

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Arrow

USA . 36,000 parts In-Stock

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Verical

USA . 36,000 parts In-Stock

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Chip1Stop

Japan . 24,000 parts In-Stock

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Elektronika Sales Private Limited

India . 12,000 parts In-Stock

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Avnet

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EBV Elektronik

Germany . 3,000 parts In-Stock

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Rochester

USA . 48 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 749 parts In-Stock

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Nova Conductors

Japan . 600 parts In-Stock

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NAC Semi

USA . 243,000 parts In-Stock

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IBS Electronics

USA . 126,000 parts In-Stock

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Chip Stock

USA . 82,256 parts In-Stock

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Vyrian

USA . 8,019 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 5,310 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 3,000 parts In-Stock

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Semtec, LLC

USA . 2,985 parts In-Stock

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Sensible Micro Corp

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Anansix

USA . 1,933 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,723 parts In-Stock

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Bristol Electronics

USA . 998 parts In-Stock

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Inventory MP

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LWI Electronics Inc

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Semicontronic

India . 132,067 parts In-Stock

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$0.076

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$0.074

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$0.074

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Ampacity Inc.

Singapore . 41,958 parts In-Stock

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Corphita

USA . 4,753 parts In-Stock

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Component Stockers USA

USA . 843,859 parts In-Stock

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AZTECH Wire

Italy . 9,760 parts In-Stock

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Argo Parts USA

USA . 2,110 parts In-Stock

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Bastille Electronics

Australia . 65 parts In-Stock

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Modulus Dynamics

Lithuania . 12,408 parts In-Stock

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Continental Prestige Electronics

USA . 16,177 parts In-Stock

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$0.316

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$0.152

Aztec Data Supply Inc.

USA . 11,543 parts In-Stock

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$1.660

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Advanced Electronics

New Zealand . 285 parts In-Stock

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$2.098

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$1.890

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Perfect Parts

USA . 1,102,080 parts In-Stock

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GreenTree Electronics

Israel . 117,000 parts In-Stock

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Glotronic Ltd.

UK . 40,800 parts In-Stock

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Kepictronics

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Eastek

USA . 9,000 parts In-Stock

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Lixinc

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iodParts Technologies Inc.

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Authorized Procurement Solutions

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UNI Independent Distributors

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Corohmni

South Africa . 2,154 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,769 parts In-Stock

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Infinite Electronics LLP (Excess)

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Robosynatics

Brazil . 1,056 parts In-Stock

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Lucentia Tech

USA . 1,056 parts In-Stock

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Supply Digital

USA . 578 parts In-Stock

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Overview

Discover the power and performance of the PMV48XP,215 by NXP Semiconductors! As a leader in semiconductor technology, NXP guarantees exceptional quality and reliability. This P-channel small signal field effect transistor is perfect for switching applications, offering seamless operation and enhanced efficiency. With a minimum DS breakdown voltage of 20V and maximum drain current of 3.5A, the PMV48XP,215 delivers outstanding results. Its compact design and surface mount capability make it versatile and easy to use. Trust NXP and experience the value and benefits that this high-quality transistor brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's plastic/epoxy package body material provides durability and protection, making it suitable for various environments and applications.

Polarity or Channel Type: P-CHANNEL

With a p-channel polarity or channel type, this transistor allows for efficient current flow and enables it to operate as a switch or amplifier in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The single configuration with a built-in diode enhances the product's functionality and flexibility, making it suitable for applications requiring both switching and rectification capabilities.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable performance in various electronic circuits.

Surface Mount: YES

Featuring surface mount capability, this product allows for easy and convenient installation onto circuit boards, saving valuable time and effort during assembly.

Minimum DS Breakdown Voltage: 20 V

With a minimum DS breakdown voltage of 20 V, this transistor can handle higher voltage levels, providing a suitable choice for applications that require robust voltage handling capabilities.

Package Shape: RECTANGULAR

The rectangular shape of this package allows for efficient utilization of space on circuit boards, making it an ideal choice for compact electronic devices.

Terminal Form: GULL WING

The gull wing terminal form ensures secure and reliable connection to circuit boards, enhancing the overall performance and longevity of the product.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode enables this transistor to offer precise control and efficient utilization of current, making it a reliable choice for various applications.

No. of Elements: 1

With a single element, this transistor provides simplicity and ease of use, allowing for straightforward integration into electronic circuits.

Maximum Drain Current (Abs) (ID): 3.5 A

This transistor's maximum drain current capacity of 3.5 A ensures it can handle high current demands, making it suitable for power-hungry applications.

No. of Terminals: 3

Having three terminals allows for versatile connection options, maximizing the potential applications and usability of this transistor.

Maximum Power Dissipation (Abs): 4.15 W

With a maximum power dissipation of 4.15 W, this transistor can handle high power levels, making it a reliable choice for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this transistor enhances its versatility and compactness, making it an excellent option for space-constrained electronic designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology ensures this transistor's excellent performance, reliability, and compatibility with various electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand elevated temperatures, making it suitable for high-temperature environments and demanding applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers excellent electrical properties, ensuring efficient performance and reliability.

Terminal Finish: Tin (Sn)

The tin (Sn) terminal finish provides reliable solderability and corrosion resistance, enhancing the overall longevity and durability of this product.

Maximum Drain-Source On Resistance: 0.055 ohm

With a low maximum drain-source on resistance of 0.055 ohm, this transistor offers efficient current flow and reduced power dissipation, contributing to its excellent performance.

Terminal Position: DUAL

The dual terminal position allows for flexible and convenient connection arrangements, providing versatility in circuit design and integration.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor is highly resistant to moisture-related damage, ensuring its reliability and longevity in various environments.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for up to 30 seconds, allowing for reliable soldering during the assembly process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this product can endure high-temperature soldering processes, ensuring secure connections and efficient assembly.

Reference Standard: IEC-60134

Complying with the IEC-60134 standard ensures the reliability, quality, and compatibility of this transistor with industry standards, making it a reputable choice for a range of applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV48XP,215 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

3.5 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV48XP,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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