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PMV48XPA

NXP Semiconductors

PMV48XPA by NXP Semiconductors

PMV48XPA by NXP Semiconductors is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 3.5A ID, 0.055 ohm RDS(on), and ENHANCEMENT MODE operation. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.

Median Price

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Lifecycle Status

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8

In-Stock Inventory

1k+

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Chip Stock

USA . 159,000 parts In-Stock

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Vyrian

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Digiode

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Anansix

USA . 2,727 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,532 parts In-Stock

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Sensible Micro Corp

USA . 1,983 parts In-Stock

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Prism Electronics

USA . 325 parts In-Stock

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Nova Conductors

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Corohmni

South Africa . 108 parts In-Stock

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$1.611

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Aztec Data Supply Inc.

USA . 33 parts In-Stock

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$1.790

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One Stop Electronics

USA . 1,537 parts In-Stock

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$9.050

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AZTECH Wire

Italy . 10,059 parts In-Stock

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Semicontronic

India . 1,447 parts In-Stock

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Ampacity Inc.

Singapore . 1,456 parts In-Stock

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Metaverse IC Inc.

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Lixinc

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Discover the superior performance of the PMV48XPA from NXP Semiconductors, a top-tier manufacturer known for delivering cutting-edge semiconductor solutions. This P-channel small signal Field Effect Transistor (FET) with built-in diode is perfect for switching applications, offering enhanced functionality and reliability. With a low drain-source on resistance and high drain current capability, this transistor provides unmatched value and efficiency for your electronic projects. Experience the quality and innovation that NXP Semiconductors brings to the table with the PMV48XPA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: P-CHANNEL

Suitable for certain applications where P-channel transistors are preferred or required.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, saving space and reducing component count.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring fast and efficient operation.

Surface Mount: YES

Can be easily mounted on circuit boards, saving time and effort during assembly.

Minimum DS Breakdown Voltage: 20 V

Can handle up to 20V, making it suitable for a range of low to medium voltage applications.

Package Shape: RECTANGULAR

Standard rectangular shape for easy integration into various circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and easy soldering on PCBs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control of the transistor, improving overall performance.

No. of Terminals: 3

Simple 3-terminal design for straightforward connectivity in circuits.

Package Style (Meter): SMALL OUTLINE

Compact small outline package for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability for the transistor.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and low on-resistance for efficient operation.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance.

Maximum Drain Current (ID): 3.5 A

Can handle up to 3.5A of current, suitable for various load requirements.

Maximum Drain-Source On Resistance: 0.055 ohm

Low on-resistance (0.055 ohm) ensures minimal power loss and high efficiency during operation.

Terminal Position: DUAL

Dual terminal position for versatile mounting options in a circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperature for up to 30 seconds during assembly.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperature of 260°C during assembly processes.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards ensuring quality and reliability of the product.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMV48XPA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV48XPA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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