Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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ADG465BRMZ-REEL7
Analog Devices
ADG465BRMZ-REEL7 by Analog Devices is a Small Signal FET with N/P-channel, 3 elements in series. It operates in enhancement mode for switching applications. With max ID of 0.02A and RDS(on) of 115Ω, it's ideal for surface mount designs requiring dual terminals in a small outline package.
SERIES, 3 ELEMENTS
.02 A
115 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G8
e3
1
3
8
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL AND P-CHANNEL
Not Qualified
YES
MATTE TIN
GULL WING
DUAL
SWITCHING
SILICON
NTMFS4C05NT1G-001
Onsemi
NTMFS4C05NT1G-001 by Onsemi is a N-channel FET with 78A max drain current and 33W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations in various electronic devices.
SINGLE
78 A
N-CHANNEL
33 W
FET General Purpose Power
NTMFS4C06NT1G-001
NTMFS4C06NT1G-001 by Onsemi is a N-CHANNEL FET with 69A max drain current and 30.5W power dissipation. Ideal for high-power applications, it operates up to 150 °C, making it suitable for various surface-mount designs.
69 A
30.5 W
NTMFS4C08NT1G-001
NTMFS4C08NT1G-001 by Onsemi is a N-channel FET with 52A max drain current and 25.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount designs, this MOSFET offers reliable performance in various electronic circuits.
52 A
25.5 W
NTMFS4C10NT1G-001
NTMFS4C10NT1G-001 by Onsemi is a N-CHANNEL FET with 46A max drain current and 23.6W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various surface-mount designs.
46 A
23.6 W
SFT1341-TL-W
The Onsemi SFT1341-TL-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high temperature resistance up to 150 °C, such as automotive electronics and industrial control systems.
10 A
e6
P-CHANNEL
15 W
Other Transistors
TIN BISMUTH
30
SFT1341-W
The Onsemi SFT1341-W is a P-CHANNEL FET with 10A max drain current and 15W max power dissipation. Ideal for applications requiring high power handling in temperatures up to 150 °C, such as power management circuits or motor control systems.
NO
Tin/Bismuth (Sn/Bi)
SFT1342-TL-W
The Onsemi SFT1342-TL-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for surface mount applications, it operates up to 150°C and features metal-oxide semiconductor technology. Suitable for various electronic circuits requiring high-power handling in compact designs.
12 A
SFT1342-W
The Onsemi SFT1342-W is a P-CHANNEL FET with 12A max drain current and 15W power dissipation. Ideal for applications requiring high power handling in temperatures up to 150°C, it features metal-oxide semiconductor technology and tin bismuth terminal finish.
NTMS4107NR2G
NTMS4107NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 15A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low on-resistance of 0.0045 ohm.
SINGLE WITH BUILT-IN DIODE
30 V
15 A
11 A
.0045 ohm
2.5 W
TIN
SI2303BDS-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI2303BDS-T1-E3 is a P-CHANNEL FET with 30V DS Breakdown Voltage and 1.49A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 0.2 ohm On Resistance, making it suitable for high temperature environments up to 150°C.
1.49 A
.2 ohm
TO-236
R-PDSO-G3
.9 W
Matte Tin (Sn)
DMN5L06DW-7
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
LOW CAPACITANCE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
50 V
.28 A
3 ohm
5 pF
R-PDSO-G6
2
6
.2 W
DMN5L06V-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Drain Current (ID): .28 A; No. of Elements: 2;
R-PDSO-F6
.15 W
FLAT
DMN5L06VA-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS192PE6327
Infineon Technologies
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Style (Meter): SMALL OUTLINE; Additional Features: LOGIC LEVEL COMPATIBLE;
LOGIC LEVEL COMPATIBLE
DRAIN
250 V
.19 A
12 ohm
8 pF
R-PSSO-F3
-55 Cel
255
1 W
AEC-Q101
DMN5L06-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.35 W
DMN5L06T-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON;
DMN5L06W-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
RSF010P03TL
ROHM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain-Source On Resistance: .35 ohm;
1 A
.35 ohm
R-PDSO-F3
e2
.8 W
TIN COPPER
10
RTF015N03TL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
1.5 A
.34 ohm
SI4884BDY-T1-E3
SI4884BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 30V DS Breakdown Voltage, 16.5A Drain Current, and 0.009 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor has a max power dissipation of 4.45W and operates up to 150°C temperature.
16.5 A
12.4 A
.009 ohm
4.45 W
FET General Purpose Powers
DMN5L06VAK-7
DMN5L06VAK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.28A max drain current, and 3 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. Suitable for small outline packages, it features separate elements with built-in diode and AEC-Q101 compliance.
HIGH RELIABILITY
.25 W
DMN5L06VK-7
DMN5L06VK-7 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, 0.28A max drain current, and 3 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C. It comes in a small outline package with matte tin finish and AEC-Q101 standard compliance.
NTJS4160NT1G
NTJS4160NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 1.8A and 0.06 ohm RDS(ON), in a small outline package with GULL WING terminals for surface mount assembly.
1.8 A
.06 ohm
NTMD6P02R2SG
NTMD6P02R2SG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 6.2A Drain Current, and 0.033 ohm On Resistance. Ideal for SWITCHING applications, it features a RECTANGULAR package with GULL WING terminals and operates in ENHANCEMENT MODE up to 150 °C.
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
20 V
6.2 A
4.8 A
.033 ohm
450 pF
2 W
NTMS4705NR2G
NTMS4705NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 10A Drain Current, and 0.01 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates up to 150 °C.
7.4 A
.01 ohm
1.52 W
NTMS4706NR2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
6.4 A
.012 ohm
NTGS3441PT1G
NTGS3441PT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 1.8A max drain current. Ideal for switching applications, it features a built-in diode, 0.11 ohm on resistance, and operates in enhancement mode. This small outline transistor has 6 terminals and GULL WING form factor for surface mount assembly.
.11 ohm
NTMSD3P102R2SG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
2.34 A
.085 ohm
135 pF
NOT SPECIFIED
Tin (Sn)
BSS127E6327
Infineon's BSS127E6327 is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 600 ohm max on resistance. Ideal for small signal applications, it features a built-in diode and operates in enhancement mode. The PLASTIC/EPOXY package with GULL WING terminals can handle up to 150°C operating temperature.
600 V
.021 A
600 ohm
1.5 pF
.5 W
BSS139E6906
Infineon's BSS139E6906 is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.1A ID, and 30 ohm RDS(on). Ideal for small signal applications, it features a built-in diode in a PLASTIC/EPOXY package. Operating in DEPLETION MODE, this transistor has a max temp of 150°C and 3.3pF Crss.
.1 A
30 ohm
3.3 pF
DEPLETION MODE
.36 W
NTVS3141PT2G
NTVS3141PT2G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.7A and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This RECTANGULAR GRID ARRAY package has 6 terminals with BALL form, suitable for surface mount designs.
3.7 A
2.9 A
R-PBGA-B6
GRID ARRAY
1.5 W
BALL
BOTTOM
DMN4027SSS-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.8 W; Terminal Position: DUAL; Terminal Finish: MATTE TIN;
40 V
8 A
6 A
.027 ohm
2.8 W
ZXMP6A17N8TC
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified; No. of Terminals: 8;
60 V
2.7 A
.125 ohm
BSS138NE6327
BSS138NE6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage and 0.23A max drain current. Ideal for small outline applications, it operates in enhancement mode with 3.5 ohm RDS(on) and 3.8pF Crss, meeting MIL-STD-883 standards at -55 to 150°C temperature range.
.23 A
3.5 ohm
3.8 pF
MIL-STD-883
40
BSS138NE6433
BSS138NE6433 by Infineon Technologies is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is surface mountable and has a max drain current of 0.23A. This transistor is commonly used in applications requiring enhancement mode operation and low power dissipation.
BSS126E6327
BSS126E6327 by Infineon Technologies is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 500 ohm max on resistance. It is used in small signal applications requiring depletion mode operation, such as power management circuits due to its 0.5W power dissipation and compact gull wing package design.
500 ohm
BSS126E6906
BSS126E6906 by Infineon Technologies is a N-CHANNEL FET with 600V DS breakdown voltage, 0.021A max drain current, and 500 ohm max on resistance. Ideal for applications requiring small outline packages, such as power supplies and motor control systems.
BSS159NE6327
BSS159NE6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A Drain Current, and 3.5 ohm On Resistance. Ideal for small signal applications in electronics due to its DEPLETION MODE operation and compact SMALL OUTLINE package style.
5.9 pF
BSS159NE6906
Infineon's BSS159NE6906 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A max drain current, and 3.5 ohm max on resistance. Ideal for small signal applications requiring low power dissipation in surface mount configurations.
NTMS4840NR2G
NTMS4840NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.5A ID. Ideal for SWITCHING applications, it features 0.024 ohm RDS(ON) and a built-in DIODE in a GULL WING package style.
5.5 A
.024 ohm
IRF5851TRPBF
International Rectifier
IRF5851TRPBF by International Rectifier is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications, operating in enhancement mode. With a max drain current of 2.7A and a min DS breakdown voltage of 20V, it is suitable for various electronic circuits requiring high performance in a small outline package.
.09 ohm
.96 W
BSS138WL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .28 A;
4.2 pF
BSS138WL6433
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (Abs) (ID): .28 A;
SN7002NE6327
Infineon's SN7002NE6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS. Ideal for small signal applications, it features a built-in diode in a GULL WING package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, this MOSFET offers low feedback capacitance of 4.2pF.
.2 A
5 ohm
SN7002NL6327
Infineon's SN7002NL6327 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.2A ID, and 5 ohm RDS(ON). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.36W. The transistor features a built-in diode and can withstand temperatures up to 150°C.
SN7002WL6327
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 4.5 pF; Peak Reflow Temperature (C): 260;
4.5 pF
SN7002WL6433
Infineon's SN7002WL6433 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 5 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 0.5W.
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