Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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FDG6301N-F085P
Onsemi
FDG6301N-F085P by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and 25V DS breakdown voltage. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and -55°C min operating temperature. Features include 4Ω max drain-source resistance, 0.22A max drain current, and matte tin terminal finish.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
25 V
.22 A
4 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-G6
e3
1
2
6
ENHANCEMENT MODE
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
AEC-Q101
YES
MATTE TIN
GULL WING
DUAL
30
SILICON
BSS123W-TP
Micro Commercial Components
BSS123W-TP by Micro Commercial Components is a Small Signal FET with 100V DS Breakdown Voltage, 0.17A ID, and 10Ω RDS(on). It features Matte Tin finish, can withstand peak reflow at 260°C for 10s. Ideal for low-power applications in electronics requiring efficient signal switching.
100 V
.17 A
10 ohm
10
DMN1023UCB4-7
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; JESD-30 Code: S-PBGA-B4; Minimum DS Breakdown Voltage: 12 V;
SINGLE WITH BUILT-IN DIODE
12 V
5.1 A
.042 ohm
30 pF
S-PBGA-B4
e1
4
150 Cel
SQUARE
GRID ARRAY
1.2 W
TIN SILVER COPPER
BALL
BOTTOM
SWITCHING
DMP2101UCB9-7
P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 12.6 pF; No. of Terminals: 9; Peak Reflow Temperature (C): 260;
COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.2 A
.1 ohm
12.6 pF
S-PBGA-B9
9
P-CHANNEL
1.56 W
CPH3461-TL-W
CPH3461-TL-W by Onsemi is a N-CHANNEL FET with 250V DS Breakdown Voltage, 0.35A Drain Current, and 7.2 ohm On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR package suitable for surface mount technology. Operating at up to 150 °C, this MOSFET has GULL WING terminals and TIN BISMUTH finish.
250 V
.35 A
7.2 ohm
TO-236
R-PDSO-G3
e6
3
1 W
FET General Purpose Power
TIN BISMUTH
DMN30H4D1S-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G3;
30 V
.43 A
7 pF
.43 W
DMN30H4D1S-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Terminal Form: GULL WING; No. of Elements: 1;
DMP2036UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Minimum Operating Temperature: -55 Cel; Terminal Position: DUAL;
6 A
.03 ohm
117 pF
1.5 W
DMP2036UVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; JESD-609 Code: e3; Maximum Feedback Capacitance (Crss): 117 pF;
5HN01SS-TL-E
5HN01SS-TL-E by Onsemi is a N-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It has a 50V DS breakdown voltage, 0.1A max drain current, and 7.5 ohm max on resistance. This small outline transistor operates in enhancement mode and features a max power dissipation of 0.15W.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
50 V
.1 A
7.5 ohm
R-PDSO-F3
.15 W
FLAT
DMP2109UVT-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 87 pF;
3.7 A
.08 ohm
87 pF
DMP2109UVT-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
DMN3071LFR4-7R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-609 Code: e4; Package Body Material: PLASTIC/EPOXY;
DRAIN
3.4 A
.075 ohm
26 pF
S-PDSO-N3
e4
1.1 W
NICKEL PALLADIUM GOLD
NO LEAD
DMN3071LFR4-7
DMN3071LFR4-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 3.4A ID, and 0.075 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features small outline package, -55 to 150°C operating range, and drain case connection.
BSS123LT7G
BSS123LT7G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring an enhancement mode transistor with built-in diode. Operates b/w -55 to 150 °C, making it suitable for various electronic devices.
6 ohm
NOT SPECIFIED
Matte Tin (Sn) - annealed
BSS138LT7G
BSS138LT7G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 3.5 ohm max RDS(on), and 150°C max operating temp. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount setups.
.2 A
3.5 ohm
5 pF
2N7002LT7H
2N7002LT7H by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 7.5 ohm RDS(on), and 115mA ID. Ideal for small outline applications requiring an Enhancement Mode MOSFET with built-in diode in a surface-mount package. Operating range from -55 to 150 °C makes it suitable for various electronic devices.
60 V
.115 A
DMN2012UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Body Material: UNSPECIFIED; Terminal Finish: NICKEL PALLADIUM GOLD;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
24 V
102 pF
R-XBCC-N6
UNSPECIFIED
CHIP CARRIER
2.3 W
DMP2079LCA3-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; JESD-30 Code: R-PBCC-N3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
3 A
.078 ohm
4.3 pF
R-PBCC-N3
1.4 W
S2N7002ET7G
S2N7002ET7G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.26A ID, and 2.5 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages, it operates b/w -55 to 150 °C with Matte Tin finish.
.26 A
2.5 ohm
DMP1070UCA3-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Additional Features: ESD PROTECTED; Transistor Element Material: SILICON;
ESD PROTECTED
3.6 A
.15 ohm
R-XBCC-N3
1.36 W
NICKEL PALLADIUM GOLD/NICKEL GOLD
DMC67D8UFDBQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .89 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 20 V;
HIGH RELIABILITY
2.9 A
101 pF
S-PDSO-N6
N-CHANNEL AND P-CHANNEL
.89 W
DMN16M0UCA6-7
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; No. of Elements: 2; Package Body Material: UNSPECIFIED;
.0059 ohm
2.6 W
DMN3060LVT-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; JESD-30 Code: R-PDSO-G6; No. of Terminals: 6;
.06 ohm
1.16 W
DMP3164LVT-13
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
LOW CAPACITANCE
2.8 A
.095 ohm
33 pF
DMT6030LFDF-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.62 W; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;
6.8 A
.0255 ohm
639 pF
1.76 W
9.62 W
DMT6030LFDF-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.62 W; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 1;
DMP2900UV-7
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F6; Terminal Form: FLAT; Terminal Position: DUAL;
LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
.85 A
.75 ohm
3.4 pF
R-PDSO-F6
.8 W
TP0606N3-G-P002
Microchip Technology
Microchip TP0606N3-G-P002 is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 1W Power Dissipation and 3.5 ohm On Resistance. Operating from -55 to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a CYLINDRICAL package.
.32 A
35 pF
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
TP0606N3-G-P003
Microchip TP0606N3-G-P003 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1W Power Dissipation, -55 to 150°C Operating Temperature range, and 3.5 ohm Drain-Source On Resistance.
BSS8402DW-TP
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 10; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): .115 A;
MCAC60P06-TP
Small Signal Field-Effect Transistors; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 60 A;
60 A
DMN33D9LV-13A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
.0024 ohm
8 pF
DMPH2040UVTQ-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW CAPACITANCE; No. of Elements: 1; Transistor Application: SWITCHING;
5.6 A
.038 ohm
1.5 pF
175 Cel
DMT12H090LFDF4-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
115 V
.09 ohm
1.6 W
BSS123-F169
BSS123-F169 by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 0.36W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
.36 W
Tin (Sn)
FDV303N-F169
FDV303N-F169 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A ID, and 0.45 ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals. Operating from -55 to 150 °C, it's an ENHANCEMENT MODE transistor with built-in diode.
.68 A
.45 ohm
.35 W
FDV304P-F169
Onsemi's FDV304P-F169 is a P-CHANNEL FET for switching applications. It features a 25V DS breakdown voltage, 0.46A max drain current, and 1.1 ohm max on resistance. With a small outline package style and GULL WING terminals, it operates in enhancement mode at -55 to 150 °C temperature range.
.46 A
1.1 ohm
10 pF
NDS0605-F169
NDS0605-F169 by Onsemi is a P-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max power dissipation of 0.36W and can withstand temperatures up to 150°C.
.18 A
5 ohm
NDS7002A-F169
NDS7002A-F169 by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a 60V min DS breakdown voltage, 0.3W max power dissipation, and 150°C max operating temperature. With a built-in diode and Gull Wing terminals, it offers efficient enhancement mode operation in a compact package.
.28 A
2 ohm
TO-236AB
-65 Cel
.3 W
FDG6332C-F085P
Onsemi's FDG6332C-F085P is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm RDS(on). Operating from -55 to 150°C, this MOSFET is AEC-Q101 compliant and comes in a small outline package.
.7 A
.3 ohm
DMP1008UCB9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.53 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e1;
8 V
13.2 A
.0091 ohm
1.53 W
NTTFS024N06CTAG
NTTFS024N06CTAG by Onsemi is a N-channel FET with 60V DS breakdown voltage and 24A max drain current. Ideal for power management applications, it operates in enhancement mode with a low on-resistance of 0.0226 ohm. Suitable for surface mount designs, it has a max power dissipation of 28W and can withstand temperatures from -55 to 175 °C.
24 A
.0226 ohm
S-PDSO-F8
8
28 W
NVC6S5A444NLZT1G
NVC6S5A444NLZT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 3.5A ID, and 0.078 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and built-in diode feature.
3.5 A
NVC6S5A444NLZT2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .078 ohm;
DMP2541UCB9-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Power Dissipation Ambient: 1.78 W; Additional Features: GATE PROTECTED;
GATE PROTECTED
5.4 A
.04 ohm
1.78 W
NTNS5K0P021ZTCG
NTNS5K0P021ZTCG by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and RESISTOR, operating in ENHANCEMENT MODE. With a max power dissipation of 0.125W and temperature range from -55 to 150 °C, it offers reliable performance in various electronic circuits.
.127 A
5.5 ohm
R-PDSO-N3
.125 W
DMC3060LVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.16 W; JESD-30 Code: R-PDSO-G6; Operating Mode: ENHANCEMENT MODE;
SEPARATE, 2 ELEMENTS
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