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5HN01SS-TL-E

Onsemi

5HN01SS-TL-E by Onsemi

5HN01SS-TL-E by Onsemi is a N-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It has a 50V DS breakdown voltage, 0.1A max drain current, and 7.5 ohm max on resistance. This small outline transistor operates in enhancement mode and features a max power dissipation of 0.15W.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 140 parts In-Stock

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$0.038

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$0.038

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Vyrian

USA . 3,672 parts In-Stock

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Digiode

USA . 2,456 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 496 parts In-Stock

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$0.038

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496

$0.038

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$1.401

100+ parts

$1.275

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$1.149

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-

10

$1.401

$1.275

$1.149

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AZTECH Wire

Italy . 891 parts In-Stock

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$13.200

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891

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Native Components

USA . 642 parts In-Stock

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$80.500

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$77.280

642

$80.500

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$77.280

Northwest PG Solutions

USA . 1,344 parts In-Stock

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$88.550

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

USA . 4,400 parts In-Stock

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TANS Electronics

Latvia . 2,909 parts In-Stock

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Kulean Microsystems

USA . 2,728 parts In-Stock

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SupplyDigital Components

Austria . 2,669 parts In-Stock

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Corphita

USA . 2,234 parts In-Stock

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UHIMA Technologies

Türkiye . 442 parts In-Stock

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Problanco Electronics

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Overview

Unlock the power of efficient switching with the 5HN01SS-TL-E by Onsemi. Crafted with precision and expertise, this small signal FET offers unparalleled quality and reliability. Ideal for a variety of applications, this N-channel transistor is a game-changer in the world of electronics. With a built-in diode and resistor, this enhancement mode transistor delivers maximum performance with minimal power consumption. Say goodbye to inefficiency and hello to seamless operation with the 5HN01SS-TL-E.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is cost-effective and lightweight, making the product suitable for portable and budget-friendly applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and lower on-resistance, enhancing efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space on the PCB, providing convenience for the user.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in such scenarios.

Surface Mount: YES

Easy integration into surface mount technology, allowing for high-density mounting and efficient production processes.

Minimum DS Breakdown Voltage: 50 V

With a high breakdown voltage, this FET can handle higher voltages, providing safety and reliability in demanding applications.

Maximum Power Dissipation (Abs): 0.15 W

Efficient power dissipation capability ensures stable performance and prevents overheating in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

This technology offers good performance characteristics, high input impedance, and low input capacitance, ideal for switching applications.

Maximum Drain Current (ID): 0.1 A

Capable of handling up to 0.1A of current, suitable for low-power applications and ensuring safe operation within the specified limits.

Maximum Drain-Source On Resistance: 7.5 ohm

Low on-resistance minimizes power losses and improves efficiency in switching applications, providing better performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5HN01SS-TL-E attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

5HN01SS-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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