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TP0606N3-G-P002

Microchip Technology

TP0606N3-G-P002 by Microchip Technology

Microchip TP0606N3-G-P002 is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 1W Power Dissipation and 3.5 ohm On Resistance. Operating from -55 to 150 °C, it features METAL-OXIDE SEMICONDUCTOR tech in a CYLINDRICAL package.

Median Price

$1.220

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 8,000 parts In-Stock

1+ parts

$1.220

100+ parts

$0.910

1k+ parts

$0.770

10k+ parts

$0.710

8,000

$1.220

$0.910

$0.770

$0.710

Mouser Electronics

USA . 1,816 parts In-Stock

1+ parts

$1.220

100+ parts

$1.080

1k+ parts

$0.920

10k+ parts

$0.910

1,816

$1.220

$1.080

$0.920

$0.910

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 89 parts In-Stock

1+ parts

$0.920

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$0.920

-

-

-

Vyrian

USA . 8,715 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,715

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,979 parts In-Stock

1+ parts

$0.402

100+ parts

-

1k+ parts

-

10k+ parts

-

4,979

$0.402

-

-

-

Corohmni

South Africa . 197 parts In-Stock

1+ parts

$0.545

100+ parts

-

1k+ parts

-

10k+ parts

-

197

$0.545

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.902

100+ parts

-

1k+ parts

$0.866

10k+ parts

-

1,000

$0.902

-

$0.866

-

Argo Parts USA

USA . 2,054 parts In-Stock

1+ parts

$0.920

100+ parts

-

1k+ parts

-

10k+ parts

-

2,054

$0.920

-

-

-

Continental Prestige Electronics

USA . 509 parts In-Stock

1+ parts

$0.920

100+ parts

-

1k+ parts

-

10k+ parts

$0.902

509

$0.920

-

-

$0.902

Ampacity Inc.

Singapore . 6,119 parts In-Stock

1+ parts

$1.040

100+ parts

-

1k+ parts

-

10k+ parts

-

6,119

$1.040

-

-

-

Semicontronic

India . 807 parts In-Stock

1+ parts

$1.040

100+ parts

$1.014

1k+ parts

$1.009

10k+ parts

-

807

$1.040

$1.014

$1.009

-

AZTECH Wire

Italy . 188 parts In-Stock

1+ parts

$8.407

100+ parts

-

1k+ parts

-

10k+ parts

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188

$8.407

-

-

-

Andel Nordic

Denmark . 1,259 parts In-Stock

1+ parts

$52.030

100+ parts

-

1k+ parts

$36.420

10k+ parts

$36.420

1,259

$52.030

-

$36.420

$36.420

Fulton Briggs Corp.

USA . 7,427 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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7,427

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Overview

Discover the TP0606N3-G-P002 by Microchip Technology, a top-quality P-Channel Field Effect Transistor perfect for switching applications. With a built-in diode and a metal-oxide semiconductor technology, this transistor offers enhanced performance and reliability. Whether you're looking to improve your electronics project or upgrade your circuit design, this small signal FET is the ideal choice. Trust in Microchip Technology's expertise and innovation to bring you the best in semiconductor components. Elevate your projects with the TP0606N3-G-P002 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where low power consumption and high noise immunity are required.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds and high efficiency are necessary.

Minimum DS Breakdown Voltage: 60 V

Ensures the transistor can handle higher voltages without breakdown, providing reliability in various applications.

Package Shape: ROUND

Allows for easy mounting and installation in circular PCB layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Enables precise control of the transistor's conductivity and power dissipation.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in design.

Maximum Power Dissipation (Abs): 1 W

Allows the transistor to handle moderate power levels efficiently.

Package Style (Meter): CYLINDRICAL

Offers a compact form factor for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high switching speeds, low power consumption, and high efficiency.

Maximum Operating Temperature: 150 °C

Ensures reliable operation in high-temperature environments.

Transistor Element Material: SILICON

Provides good thermal conductivity and high reliability for performance consistency.

Minimum Operating Temperature: -55 °C

Allows the transistor to function in extreme cold conditions.

Terminal Finish: MATTE TIN

Enhances solderability and reliability of the terminal connections.

Maximum Drain Current (ID): 0.32 A

Suitable for low-current applications where precision and efficiency are important.

Maximum Drain-Source On Resistance: 3.5 ohm

Provides a low on-resistance for minimal power loss and high efficiency in switching applications.

Terminal Position: BOTTOM

Facilitates easy PCB layout and integration into compact designs.

Maximum Feedback Capacitance (Crss): 35 pF

Reduces signal distortion and enhances high-frequency performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP0606N3-G-P002 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

35 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP0606N3-G-P002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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