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TP0606N3

Supertex

TP0606N3 by Supertex

Supertex TP0606N3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 0.5A Drain Current, 1W Power Dissipation, and 3.5Ω On Resistance. Its METAL-OXIDE SEMICONDUCTOR technology ensures reliable performance up to 150°C operating temperature.

Median Price

$1.920

Lifecycle Status

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5

In-Stock Inventory

1k+

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Component Electronics Inc.

Canada . 64 parts In-Stock

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$1.920

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$1.440

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$1.250

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Vyrian

USA . 1,111 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Microfarads

USA . 54 parts In-Stock

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M&R Communications

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AZTECH Wire

Italy . 445 parts In-Stock

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$15.483

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Semicontronic

India . 1,243 parts In-Stock

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$51.050

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$49.774

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$49.518

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Kepictronics

USA . 13,000 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

USA . 727 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Overview

Enhance your electronic projects with the TP0606N3 by Supertex! Crafted by a trusted manufacturer, this small signal Field Effect Transistor offers superior quality and reliability. Ideal for switching applications, this P-CHANNEL transistor features a built-in diode for added convenience. With a maximum power dissipation of 1W and a minimum DS breakdown voltage of 60V, this transistor provides excellent performance in a compact package. Upgrade your circuits today with the TP0606N3 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low resistance and high input impedance, making them efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and low power dissipation.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage of 60V ensures that the transistor can handle high voltage levels without failing, making it reliable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient protection against reverse voltage, ensuring the safe operation of the transistor in circuits.

Maximum Drain Current (Abs) (ID): 0.5 A

With a maximum drain current of 0.5A, this transistor can handle moderate power applications with ease.

Maximum Power Dissipation (Abs): 1 W

The maximum power dissipation of 1W indicates the heat-handling capacity of the transistor, making it suitable for applications where heat generation is a concern.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that the transistor can operate reliably in high-temperature environments without overheating.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP0606N3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Supertex

Specs

Additional Features:

HIGH INPUT IMPEDANCE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.5 A

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

35 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP0606N3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.90.00.00

SB

8541.90.00.00

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