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TP0610K-T1-E3

Vishay Intertechnology

TP0610K-T1-E3 by Vishay Intertechnology

Vishay Intertechnology TP0610K-T1-E3 is a P-CHANNEL FET with 60V DS breakdown voltage, 0.185A drain current, and 6 ohm on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.

Median Price

$0.243

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1k+

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Mouser Electronics

USA . 309,716 parts In-Stock

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$0.330

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Adafruit Industries

USA . 50 parts In-Stock

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TTI Europe

Germany . 147,000 parts In-Stock

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Future Electronics

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Chip1Stop

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Verical

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TTI

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Arrow

USA . 1 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Component Electronics Inc.

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Bristol Electronics

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ComSIT Distribution GmbH

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Component Sense

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Inventory MP

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NAC Semi

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LIBRA Elektronik GmbH

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Dan-Mar Components

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Technoshack Inc.

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Semicontronic

India . 221,529 parts In-Stock

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Ampacity Inc.

Singapore . 106,417 parts In-Stock

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Argo Parts USA

USA . 3,913 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Component Stockers USA

USA . 988,547 parts In-Stock

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Modulus Dynamics

Lithuania . 8,973 parts In-Stock

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CoreStaff

Japan . 2,919 parts In-Stock

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Corohmni

South Africa . 963 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,742 parts In-Stock

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Perfect Parts

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Lucentia Tech

USA . 34,062 parts In-Stock

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Assy Fe

Spain . 22,245 parts In-Stock

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Epart123

USA . 8,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,511 parts In-Stock

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Continental Prestige Electronics

USA . 5,245 parts In-Stock

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ChipTracer

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GreenTree Electronics

Israel . 2,446 parts In-Stock

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S.R.D Solutions

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Robosynatics

Brazil . 100 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 50 parts In-Stock

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Overview

Elevate your electronic projects with the TP0610K-T1-E3 by Vishay Intertechnology. Crafted with precision and quality in mind, this small signal field effect transistor offers unparalleled performance in switching applications. With a built-in diode and P-channel configuration, this enhancement mode transistor delivers reliability and efficiency. Whether you're a DIY enthusiast or a seasoned professional, trust Vishay Intertechnology to provide the cutting-edge components you need to bring your designs to life. Experience the difference with the TP0610K-T1-E3 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low ON-resistance and high current-carrying capabilities, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse polarity protection and helps with efficiency in certain circuit designs.

Transistor Application: SWITCHING

This FET is specifically designed for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

The surface mount capability makes it easier to integrate this transistor into compact circuit designs, saving space and improving overall efficiency.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage ensures reliable operation in various voltage conditions, adding to the versatility of this transistor.

Maximum Power Dissipation (Abs): 0.35 W

With a relatively high power dissipation rating, this transistor can handle moderate power levels without overheating or failing.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in a wide range of environments without compromising performance.

Maximum Drain-Source On Resistance: 6 ohm

The low ON-resistance ensures minimal power loss and heat generation, improving efficiency in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP0610K-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

ESD PROTECTION, LOW THRESHOLD

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.185 A

Maximum Drain Current (ID):

.185 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP0610K-T1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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