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TP0610KL-TR1-E3

Vishay Intertechnology

TP0610KL-TR1-E3 by Vishay Intertechnology

TP0610KL-TR1-E3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max drain current of 0.27A and a max drain-source on resistance of 6 ohm.

Median Price

$1.540

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 5 parts In-Stock

1+ parts

$1.540

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$1.150

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$1.000

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5

$1.540

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$1.000

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Vyrian

USA . 8,110 parts In-Stock

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Nova Conductors

Japan . 46 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 1,083 parts In-Stock

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$0.314

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$0.314

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Aztec Data Supply Inc.

USA . 3,987 parts In-Stock

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$0.370

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3,987

$0.370

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AZTECH Wire

Italy . 285 parts In-Stock

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$9.492

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285

$9.492

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Ampacity Inc.

Singapore . 491 parts In-Stock

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$18.050

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491

$18.050

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Semicontronic

India . 787 parts In-Stock

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$45.050

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$43.924

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$43.698

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787

$45.050

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$43.698

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Kepictronics

USA . 12,000 parts In-Stock

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Argo Parts USA

USA . 3,936 parts In-Stock

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Continental Prestige Electronics

USA . 3,450 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 88 parts In-Stock

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88

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Robosynatics

Brazil . 20 parts In-Stock

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Lucentia Tech

USA . 20 parts In-Stock

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$3.541

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$3.541

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$3.541

20

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$3.541

$3.541

$3.541

Overview

Discover the TP0610KL-TR1-E3 by Vishay Intertechnology, a high-quality small signal Field Effect Transistor (FET) that offers exceptional value and benefits. With its P-Channel configuration and built-in diode, this transistor is perfect for switching applications. Its 60V minimum DS breakdown voltage ensures reliable performance, while the metal-oxide semiconductor technology and silicon element material guarantee durability. The TP0610KL-TR1-E3's matte tin terminal finish and through-hole terminal form make installation a breeze. Trust Vishay Intertechnology for cutting-edge solutions in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower on-resistance, making them more efficient for certain switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for convenient reverse polarity protection, enhancing the reliability of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without damage, adding to its versatility.

Package Shape: ROUND

The round package shape is compact and easy to mount, making it suitable for tight spaces.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high efficiency and fast switching speeds, making this transistor ideal for various applications.

Maximum Drain Current (ID): 0.27 A

Capable of handling a maximum drain current of 0.27 A, allowing for use in moderate power applications.

Maximum Drain-Source On Resistance: 6 ohm

With a low on-resistance value of 6 ohm, this transistor minimizes power loss and heat dissipation.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP0610KL-TR1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

ESD PROTECTION

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.27 A

Maximum Drain-Source On Resistance:

6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-226AA

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP0610KL-TR1-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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