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TP0606N3-G-P003

Microchip Technology

TP0606N3-G-P003 by Microchip Technology

Microchip TP0606N3-G-P003 is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 1W Power Dissipation, -55 to 150°C Operating Temperature range, and 3.5 ohm Drain-Source On Resistance.

Median Price

$0.703

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$0.703

100+ parts

$0.640

1k+ parts

$0.576

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600

$0.703

$0.640

$0.576

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.912

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10

$0.912

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Vyrian

USA . 6,301 parts In-Stock

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6,301

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Distributors (Availability)

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Semicontronic

India . 318 parts In-Stock

1+ parts

$0.600

100+ parts

$0.585

1k+ parts

$0.582

10k+ parts

-

318

$0.600

$0.585

$0.582

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$0.703

100+ parts

$0.640

1k+ parts

$0.576

10k+ parts

-

600

$0.703

$0.640

$0.576

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Argo Parts USA

USA . 3,896 parts In-Stock

1+ parts

$0.912

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3,896

$0.912

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Continental Prestige Electronics

USA . 3,178 parts In-Stock

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$0.912

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$0.894

3,178

$0.912

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$0.894

Ampacity Inc.

Singapore . 458 parts In-Stock

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$1.300

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458

$1.300

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Corohmni

South Africa . 476 parts In-Stock

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$1.539

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476

$1.539

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Aztec Data Supply Inc.

USA . 2,491 parts In-Stock

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$1.770

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2,491

$1.770

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Microchip USA

USA . 3,525 parts In-Stock

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$5.915

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$5.915

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AZTECH Wire

Italy . 336 parts In-Stock

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$13.553

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336

$13.553

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XL Components Corporation

Australia . 7,092 parts In-Stock

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7,092

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.894

1k+ parts

$0.866

10k+ parts

$0.848

2,000

-

$0.894

$0.866

$0.848

Marpe Global Electronics

Taiwan . 1,602 parts In-Stock

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1,602

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QualityLine Systems

Poland . 1,042 parts In-Stock

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1,042

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Overview

Discover the TP0606N3-G-P003 by Microchip Technology, a high-quality P-CHANNEL Small Signal Field Effect Transistor with a built-in diode. Ideal for switching applications, this transistor offers enhanced performance and reliability. With a maximum breakdown voltage of 60V and a low on-resistance of 3.5 ohm, this transistor is designed to handle power efficiently. Trust in Microchip Technology's reputation for excellence and innovation, and experience the benefits of using the TP0606N3-G-P003 in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: P-CHANNEL

Offers low resistance in the ON state, making it efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for protection and circuit simplification, enhancing overall reliability.

Transistor Application: SWITCHING

Optimized for quick and efficient switching operations, ideal for use in electronic circuits.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without failure.

Maximum Power Dissipation (Abs): 1 W

Capable of dissipating up to 1 watt of power, ensuring reliability under normal operating conditions.

Operating Mode: ENHANCEMENT MODE

Designed for enhancement mode operation, allowing for easy control of the transistor for various circuit requirements.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments, increasing its versatility.

Maximum Drain Current (ID): 0.32 A

Capable of handling up to 0.32 amps of current flow, making it suitable for moderate-power applications.

Maximum Drain-Source On Resistance: 3.5 ohm

Low on-resistance helps minimize power losses and improve efficiency in switching operations.

Maximum Feedback Capacitance (Crss): 35 pF

Low feedback capacitance ensures stable operation and minimal signal distortion in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TP0606N3-G-P003 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.32 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

35 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TP0606N3-G-P003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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