Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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PMDT290UNEYL
Nexperia
PMDT290UNEYL by Nexperia is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a Min DS Breakdown Voltage of 20V, Max Drain Current of 0.8A, and Max Drain-Source On Resistance of 0.38 ohm. This small outline transistor operates in ENHANCEMENT MODE and is surface mountable.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
.8 A
.38 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F6
e3
1
2
6
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
YES
TIN
FLAT
DUAL
30
SWITCHING
SILICON
PMV65UNEAR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.25 W; Transistor Element Material: SILICON; JESD-609 Code: e3;
SINGLE WITH BUILT-IN DIODE
2.8 A
.073 ohm
43 pF
TO-236AB
R-PDSO-G3
3
150 Cel
-55 Cel
6.25 W
AEC-Q101; IEC-60134
GULL WING
IPC302N08N3X1SA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 80 V; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;
80 V
.1 ohm
R-XXUC-N
UNSPECIFIED
UNCASED CHIP
NOT SPECIFIED
NO LEAD
BSL205NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 20 V;
AVALANCHE RATED
2.5 A
.05 ohm
24 pF
R-PDSO-G6
AEC-Q101
BSL207NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Package Shape: RECTANGULAR; Terminal Position: DUAL;
2.1 A
.07 ohm
BSL314PEH6327XTSA1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Reference Standard: AEC-Q101; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
30 V
1.5 A
.14 ohm
11 pF
P-CHANNEL
BSL802SNH6327XTSA1
BSL802SNH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.5A ID, and 0.022 ohm RDS(on). It is used in applications requiring high drain current capability and low on-resistance, such as automotive electronics due to AEC-Q101 standard compliance.
7.5 A
.022 ohm
77 pF
BSS119NH6433XTMA1
Infineon's BSS119NH6433XTMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.17A ID, and 6 ohm RDS. Ideal for small signal applications in automotive electronics due to AEC-Q101 standard compliance and -55 to 150 °C operating range.
LOGIC LEVEL COMPATIBLE
100 V
.17 A
6 ohm
3.1 pF
.5 W
BSZ0907NDXTMA2
N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: S-PDSO-N8; Maximum Drain Current (ID): 8.5 A; Additional Features: AVALANCHE RATED;
DRAIN SOURCE
SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
8.5 A
.013 ohm
S-PDSO-N8
8
SQUARE
SN7002WH6433XTMA1
Infineon's SN7002WH6433XTMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 5 ohm RDS(ON). Ideal for small outline applications in automotive electronics due to AEC-Q101 compliance.
60 V
.23 A
5 ohm
4.5 pF
BSS119L6433HTMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
4.1 pF
.36 W
BSS123L6433HTMA1
Infineon's BSS123L6433HTMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.17A ID, and 6ohm RDS. Ideal for small outline applications requiring high temp operation up to 150°C. Suitable for circuits needing low feedback capacitance of 6.3pF and built-in diode configuration.
6.3 pF
BSS159NH6327XTSA1
Infineon's BSS159NH6327XTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. Ideal for DEPLETION MODE operation, it features 3.5Ω RDS(on) and 5.9pF Crss, making it suitable for small signal applications in electronics. The PLASTIC/EPOXY package with GULL WING terminals offers easy surface mount installation.
3.5 ohm
5.9 pF
DEPLETION MODE
BSS169L6906HTSA1
Infineon's BSS169L6906HTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A ID, and 6 ohm RDS. Ideal for depletion mode applications, it features a built-in diode and operates at up to 150°C. Suitable for surface mount designs in various electronic circuits.
7 pF
BSL373SNH6327XTSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
2 A
.23 ohm
21 pF
BSL214NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 2; Moisture Sensitivity Level (MSL): 1;
9 pF
BSL806NH6327XTSA1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 28.6 pF;
2.3 A
.057 ohm
28.6 pF
IPC218N04N3X7SA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-XXUC-N; Terminal Position: UNSPECIFIED; Transistor Element Material: SILICON;
40 V
IPC26N12NX1SA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: UNSPECIFIED; Package Shape: RECTANGULAR;
120 V
IPC302N15N3X1SA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: UNSPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
150 V
IPC302N20NFDX1SA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .1 ohm; Peak Reflow Temperature (C): NOT SPECIFIED;
200 V
IPN70R2K1CEATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; Terminal Finish: TIN;
DRAIN
700 V
2.1 ohm
-40 Cel
BSS138NE7854
BSS138NE7854 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. It is used in small outline packages for applications requiring low power dissipation, such as MIL-STD-883 compliant circuits.
3.8 pF
MIL-STD-883
BSS159NL6906HTSA1
Infineon's BSS159NL6906HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.23A ID. Ideal for DEPLETION MODE operation, it features 3.5 ohm RDS(on) and 5pF Crss. Widely used in automotive applications due to AEC-Q101 compliance.
5 pF
IPC302N08N3X2SA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): UNCASED CHIP; Terminal Form: NO LEAD; JESD-30 Code: R-XXUC-N;
DMN5L06VK-13A
Diodes Incorporated
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Package Shape: RECTANGULAR; JESD-609 Code: e3;
HIGH RELIABILITY
50 V
.28 A
3 ohm
.25 W
MATTE TIN
DMN5L06VK-7A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-30 Code: R-PDSO-F6; Maximum Drain-Source On Resistance: 3 ohm;
ZXMS6001N3QTA
N-CHANNEL; Surface Mount: YES; Terminal Position: DUAL; Maximum Power Dissipation Ambient: 1.5 W; No. of Terminals: 4; Moisture Sensitivity Level (MSL): 1;
ESD PROTECTED
SOURCE
1.1 A
.675 ohm
R-PDSO-G4
4
1.5 W
BSS138A-TP-HF
Micro Commercial Components
BSS138A-TP-HF by Micro Commercial Components is a N-channel FET with 50V DS breakdown voltage, 0.22A max drain current, and 1.6 ohm max on resistance. Ideal for small signal applications in enhancement mode operation, featuring a built-in diode and operating temperature range of -55 to 150°C.
.22 A
1.6 ohm
.35 W
10
DMC62D0SVQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
.571 A
2.9 pF
N-CHANNEL AND P-CHANNEL
.84 W
DMC62D0SVQ-7
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-F6;
DMP2120U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .062 ohm; Maximum Feedback Capacitance (Crss): 53 pF; Minimum Operating Temperature: -55 Cel;
FAST SWITCHING
3.8 A
.062 ohm
53 pF
1.3 W
RSR010N10HZGTL
ROHM
ROHM's RSR010N10HZGTL is a N-CHANNEL FET with 100V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.58 ohm on-resistance. Its GULL WING terminals and AEC-Q101 standard make it suitable for automotive electronics.
1 A
.58 ohm
12 pF
1 W
DMT35M7LFV-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 534 pF; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .005 ohm;
.005 ohm
534 pF
S-PDSO-F5
5
1.98 W
SI2302A-TP-HF
SI2302A-TP-HF by Micro Commercial Components is a N-channel FET with 20V breakdown voltage and 3A drain current. Ideal for small outline applications, it operates in enhancement mode with a max power dissipation of 1.25W. With a drain-source resistance of 0.072 ohm, this transistor is suitable for high-performance electronic circuits.
3 A
.072 ohm
45 pF
1.25 W
HTNFETD
Honeywell
Small Signal Field-Effect Transistors;
HTNFETT
BSS84W-G
Comchip Technology
Comchip Technology's BSS84W-G is a P-CHANNEL FET with 50V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has 0.2W Power Dissipation, 0.13A Drain Current, and 10 ohm On Resistance.
.13 A
10 ohm
.2 W
2SJ360(F)
Toshiba
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1; Package Shape: RECTANGULAR;
1.2 ohm
R-PSSO-F3
SINGLE
DMN3270UVT-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Transistor Element Material: SILICON; No. of Elements: 2;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
1.6 A
.27 ohm
7.5 pF
1.08 W
DMC2057UVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Terminal Position: DUAL; Terminal Form: GULL WING;
4 A
.042 ohm
1.1 W
DMC3730UVT-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;
ESD PROTECTED, HIGH RELIABILITY
25 V
.46 A
1.1 ohm
175 Cel
.9 W
DMN5L06VKQ-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
DMN5L06WKQ-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 3 ohm; Peak Reflow Temperature (C): 260;
.3 A
-65 Cel
DMT3022UEV-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Operating Mode: ENHANCEMENT MODE; JESD-609 Code: e3;
17 A
67 pF
S-PDSO-F6
1.8 W
DMT3022UEV-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Case Connection: DRAIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSM400D12P2G003
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BSM600C12P3G201
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