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BSL802SNH6327XTSA1

Infineon Technologies

BSL802SNH6327XTSA1 by Infineon Technologies

BSL802SNH6327XTSA1 by Infineon Technologies is a N-CHANNEL FET with 20V DS Breakdown Voltage, 7.5A ID, and 0.022 ohm RDS(on). It is used in applications requiring high drain current capability and low on-resistance, such as automotive electronics due to AEC-Q101 standard compliance.

Median Price

$0.212

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 18,000 parts In-Stock

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$0.204

18,000

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$0.204

Rochester

USA . 18,000 parts In-Stock

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-

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$0.220

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$0.183

10k+ parts

$0.163

18,000

-

$0.220

$0.183

$0.163

Distributors (In-Stock)

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Vyrian

USA . 8,225 parts In-Stock

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8,225

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VNN

France . 2,253 parts In-Stock

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Digiode

USA . 714 parts In-Stock

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714

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Nova Conductors

Japan . 90 parts In-Stock

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90

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Distributors (Availability)

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Corohmni

South Africa . 163 parts In-Stock

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$0.660

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163

$0.660

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Modulus Dynamics

Lithuania . 2,909 parts In-Stock

1+ parts

$0.678

100+ parts

$0.651

1k+ parts

$0.624

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-

2,909

$0.678

$0.651

$0.624

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Aztec Data Supply Inc.

USA . 1,273 parts In-Stock

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$1.260

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$1.260

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AZTECH Wire

Italy . 553 parts In-Stock

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$19.133

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553

$19.133

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Semicontronic

India . 1,011 parts In-Stock

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$30.050

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$29.299

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$29.148

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1,011

$30.050

$29.299

$29.148

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Ampacity Inc.

Singapore . 1,092 parts In-Stock

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$52.050

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$52.050

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QUARKTWIN TECHNOLOGY LTD

USA . 23,118 parts In-Stock

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Argo Parts USA

USA . 4,537 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 323 parts In-Stock

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Corphita

USA . 203 parts In-Stock

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203

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Overview

Upgrade your electronics with the BSL802SNH6327XTSA1 by Infineon Technologies, a top-tier manufacturer known for quality and reliability. This small signal field effect transistor (FET) offers unparalleled performance in a variety of applications. With its N-CHANNEL polarity, single configuration with built-in diode, and enhancement mode operating mode, this FET delivers superior efficiency and functionality. Its compact design, high drain current capacity, and low drain-source on resistance make it ideal for demanding projects. Trust Infineon Technologies to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durable and lightweight packaging for the transistor, ensuring reliable performance in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and switching speed compared to P-channel transistors, making them a suitable choice for many electronic circuits.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle higher voltage levels without failure, providing robustness in different operating conditions.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient protection against reverse current flow and voltage spikes in the circuit, enhancing the reliability of the overall system.

Maximum Drain Current (ID): 7.5 A

This high maximum drain current rating allows the transistor to handle large current loads, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.022 ohm

The low on-resistance of the transistor results in minimal power loss and heat dissipation, improving efficiency in the circuit.

Maximum Feedback Capacitance (Crss): 77 pF

The low feedback capacitance helps reduce signal distortion and improve high-frequency performance, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSL802SNH6327XTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

7.5 A

Maximum Drain-Source On Resistance:

.022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

77 pF

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSL802SNH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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