Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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DMP2060UFDB-13
Diodes Incorporated
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.2 A; No. of Terminals: 6; Minimum DS Breakdown Voltage: 20 V;
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.2 A
.09 ohm
METAL-OXIDE SEMICONDUCTOR
S-PDSO-N6
e4
2
6
ENHANCEMENT MODE
PLASTIC/EPOXY
SQUARE
SMALL OUTLINE
260
P-CHANNEL
YES
NICKEL PALLADIUM GOLD
NO LEAD
DUAL
SWITCHING
SILICON
DMC2041UFDB-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; Maximum Drain-Source On Resistance: .04 ohm; Terminal Finish: NICKEL PALLADIUM GOLD;
4.7 A
.04 ohm
150 Cel
-55 Cel
N-CHANNEL AND P-CHANNEL
DMN10H170SFDE-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; JESD-30 Code: S-PDSO-N6; Terminal Finish: NICKEL PALLADIUM GOLD;
SINGLE WITH BUILT-IN DIODE
100 V
2.9 A
.2 ohm
25 pF
1
N-CHANNEL
2.03 W
DMN32D4SDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 30 V;
30 V
.65 A
1 ohm
6.8 pF
R-PDSO-G6
e3
RECTANGULAR
.35 W
MATTE TIN
GULL WING
30
DMG3404L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 30 V;
4.2 A
.025 ohm
R-PDSO-G3
3
DMN1029UFDB-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
12 V
5.6 A
.029 ohm
119 pF
1.4 W
CPH3351-TL-W
Onsemi
CPH3351-TL-W by Onsemi is a P-CHANNEL FET with 60V DS breakdown voltage and 1.8A max drain current. Ideal for small outline applications, it operates in enhancement mode with 0.25 ohm on resistance, making it suitable for various electronic devices requiring high performance in compact designs.
60 V
1.8 A
.25 ohm
TO-236
e6
TIN BISMUTH
DMC25D0UVT-13
N-CHANNEL AND P-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
HIGH RELIABILITY
COMPLEX
25 V
4 ohm
47 pF
1.2 W
DMP3018SFK-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: HIGH RELIABILITY; JESD-609 Code: e4; Reference Standard: AEC-Q101;
10.2 A
.0145 ohm
686 pF
R-PDSO-N4
4
AEC-Q101
MCH3375-TL-W
MCH3375-TL-W by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 1.6A max drain current. Ideal for switching applications, it features a built-in diode, 0.295 ohm RDS(on), and operates in enhancement mode. This small outline transistor has a tin bismuth finish and is surface mountable.
1.6 A
.295 ohm
R-PDSO-F3
FLAT
MCH3477-TL-W
MCH3477-TL-W by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 4.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.038 ohm on-resistance for efficient performance.
4.5 A
.038 ohm
Tin/Bismuth (Sn/Bi)
DMC25D1UVT-13
N-CHANNEL AND P-CHANNEL; Configuration: COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-PDSO-G6;
COMMON SUBSTRATE, 2 ELEMENTS WITH BUILT-IN DIODE
3.9 A
.055 ohm
3.3 pF
1.3 W
NVJS3151PT1G
NVJS3151PT1G by Onsemi is a P-CHANNEL FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 12V, max drain current of 2.7A, and max operating temp of 150 °C. With a small outline package style and matte tin terminal finish, it offers reliable performance in various electronic devices.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.7 A
.06 ohm
.625 W
ZXMS6004SGQTA
ZXMS6004SGQTA by Diodes Incorporated is a N-CHANNEL FET with 60V DS breakdown voltage, 0.6 ohm RDS(on), and -40 to 150°C operating range. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and built-in diode feature.
SOURCE
.6 ohm
R-PDSO-G4
-40 Cel
ZXMS6006DT8QTA
ZXMS6006DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.125 ohm RDS(on), and 150°C max operating temp. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology.
.125 ohm
R-PDSO-G8
8
CPH3356-TL-W
CPH3356-TL-W by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 2.5A max drain current, and 0.137 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
2.5 A
.137 ohm
MCH6663-TL-W
MCH6663-TL-W by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Features include 30V DS breakdown voltage, 0.188 ohm RDS(on), and 1.8A ID max. Ideal for applications requiring high temp operation up to 150 °C in small outline packages.
.188 ohm
R-PDSO-F6
ZXMS6004DT8QTA
ZXMS6004DT8QTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.6 ohm RDS(on), and AEC-Q101 standard. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals for surface mount assembly.
ZXMS6005SGQTA
ZXMS6005SGQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.25 ohm RDS(on), and built-in diode for SWITCHING applications. It features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR tech, and operates in ENHANCEMENT MODE. Ideal for automotive electronics due to AEC-Q101 compliance.
ZXMS6006SGQTA
ZXMS6006SGQTA by Diodes Inc. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.125 ohm RDS(on), and built-in diode for switching applications. It's a small outline package with gull wing terminals, suitable for surface mount assembly in automotive electronics meeting AEC-Q101 standards.
CSD13302WT
Texas Instruments
CSD13302WT by Texas Instruments is a N-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM, 0.0285 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.8W and operating temperature up to 150°C, it offers reliable performance in various electronic devices.
ULTRA LOW RESISTANCE
.0285 ohm
196 pF
S-PBGA-B4
e1
GRID ARRAY
1.8 W
29 A
TIN SILVER COPPER
BALL
BOTTOM
CPH3360-TL-W
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1; JEDEC-95 Code: TO-236;
.303 ohm
MCH3333A-TL-W
MCH3333A-TL-W by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage, 0.215 ohm RDS(on), and 2A ID. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C. This small outline transistor features a built-in diode and tin bismuth terminal finish.
2 A
.215 ohm
.9 W
MCH3474-TL-W
MCH3474-TL-W by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 0.05 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has 3 terminals and can handle up to 4A of Drain Current.
4 A
.05 ohm
METAL SEMICONDUCTOR
1 W
MCH3481-TL-W
MCH3481-TL-W by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.8W Power Dissipation, and 2A Drain Current. Ideal for SWITCHING applications in small outline packages, it operates at up to 150 °C with a 0.104 ohm On Resistance.
.104 ohm
.8 W
DMC6070LND-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain Current (ID): 2.4 A; Terminal Finish: MATTE TIN;
2.4 A
.085 ohm
S-PDSO-F8
DMG1016VQ-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .53 W; No. of Elements: 2; Maximum Drain-Source On Resistance: .4 ohm;
.87 A
.4 ohm
5.37 pF
.53 W
AEC-Q101; IATF 16949; MIL-STD-202
DMN3027LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.07 W; Maximum Feedback Capacitance (Crss): 70 pF; JESD-30 Code: S-PDSO-N5;
5.3 A
.0186 ohm
70 pF
S-PDSO-N5
5
2.07 W
DMN2026UVT-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.75 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
6.2 A
.024 ohm
37 pF
1.75 W
DMN5L06DMKQ-7
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 50 V; No. of Elements: 2;
50 V
.305 A
3 ohm
5 pF
DMN67D8L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -55 Cel; Package Shape: RECTANGULAR;
.21 A
5 ohm
DMN61D8L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: DUAL; Maximum Operating Temperature: 150 Cel;
.47 A
2.4 ohm
NVC3S5A51PLZT1G
NVC3S5A51PLZT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 1.7A ID and 0.25 ohm Drain-Source Resistance, suitable for high-temp environments up to 175 °C.
1.7 A
175 Cel
VEC2315-TL-W
VEC2315-TL-W by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for amplifier applications. It features a 60V DS breakdown voltage, 0.137 ohm max RDS(on), and 2.5A max ID. This small outline transistor operates in enhancement mode at up to 150 °C, making it suitable for various electronic circuits.
R-PDSO-F8
AMPLIFIER
MCH3383-TL-W
MCH3383-TL-W by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, 3.5A ID, and 0.069 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C with a peak reflow temp of 260 °C.
3.5 A
.069 ohm
NTNS3C94NZT5G
NTNS3C94NZT5G by Onsemi is a N-CHANNEL FET with 12V DS Breakdown Voltage, 0.384A ID, and 0.48ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE at -55 to 150 °C, featuring PLASTIC/EPOXY package and NO LEAD terminals.
.384 A
.48 ohm
S-PBCC-N3
CHIP CARRIER
.12 W
SINGLE
CPH3348-TL-W
CPH3348-TL-W by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, 0.07 ohm RDS(on), and 3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. This SMALL OUTLINE transistor features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
3 A
.07 ohm
NTLUS4C16NTBG
NTLUS4C16NTBG by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a 30V min DS breakdown voltage, 6.1A max drain current, and 0.0114 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices requiring high power dissipation and temperature tolerance up to 150 °C.
6.1 A
.0114 ohm
S-PDSO-N3
1.53 W
VEC2616-TL-W
Onsemi's VEC2616-TL-W is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, this MOSFET offers 0.08 ohm RDS(on) and can handle up to 1W power dissipation at 150 °C.
.08 ohm
NTLUD4C26NTBG
NTLUD4C26NTBG by Onsemi is a Small Signal FET with 2 elements, built-in diode, and N-channel polarity. Ideal for switching applications, it has a max drain current of 4.8A, on-resistance of 0.021 ohm, and operates b/w -55 to 150 °C. This MOSFET in a square package with no lead terminals is designed for surface mount assembly.
4.8 A
.021 ohm
1.7 W
TPCC8066-HLQS
Toshiba
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
11 A
.019 ohm
S-PDSO-F5
DMC2450UV-13
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Minimum DS Breakdown Voltage: 20 V; JESD-609 Code: e3;
ESD PROTECTED
1.03 A
.7 ohm
2SK2963(TE12L,F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 1 A;
1 A
1.5 W
FET General Purpose Power
DMP510DL-13
DMP510DL-13 by Diodes Inc. is a P-channel FET with 50V DS breakdown voltage and 0.18A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 10 ohm max on-resistance and matte tin terminal finish.
.18 A
10 ohm
DMN2230UQ-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; Maximum Drain-Source On Resistance: .11 ohm;
.11 ohm
NSVJ5908DSG5T1G
NSVJ5908DSG5T1G by Onsemi is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Operating in depletion mode, it has a max power dissipation of 0.3W and can handle a max drain current of 0.05A. This small outline transistor has a temp range of -55 to 150°C and is AEC-Q101 compliant.
LOW NOISE
COMMON SOURCE, 2 ELEMENTS
.05 A
JUNCTION
R-PDSO-F5
DEPLETION MODE
.3 W
DMP2170U-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: .09 ohm;
FAST SWITCHING
3.1 A
1.28 W
DMN2008LFU-13
N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: NICKEL PALLADIUM GOLD; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e4;
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
14.5 A
.0096 ohm
R-PDSO-N6
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