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MCH3477-TL-W

Onsemi

MCH3477-TL-W by Onsemi

MCH3477-TL-W by Onsemi is a N-CHANNEL FET with 20V DS breakdown voltage and 4.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style. Operating in enhancement mode, this MOSFET has 0.038 ohm on-resistance for efficient performance.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 162 parts In-Stock

1+ parts

$0.069

100+ parts

$0.065

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162

$0.069

$0.065

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Rochester

USA . 86,816 parts In-Stock

1+ parts

-

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$0.172

1k+ parts

$0.143

10k+ parts

$0.127

86,816

-

$0.172

$0.143

$0.127

Verical

USA . 68,000 parts In-Stock

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$0.159

68,000

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$0.159

Chip1Stop

Japan . 162 parts In-Stock

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$0.065

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162

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$0.065

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Distributors (In-Stock)

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Digiode

USA . 2,191 parts In-Stock

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$0.066

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$0.066

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Vyrian

USA . 3,796 parts In-Stock

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3,796

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Distributors (Availability)

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Corphita

USA . 2,105 parts In-Stock

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$0.062

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2,105

$0.062

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Corohmni

South Africa . 117 parts In-Stock

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$0.065

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117

$0.065

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AZTECH Wire

Italy . 517 parts In-Stock

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$16.370

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517

$16.370

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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99,000

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Continental Prestige Electronics

USA . 94,846 parts In-Stock

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$0.129

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94,846

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$0.129

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QUARKTWIN TECHNOLOGY LTD

USA . 8,511 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,294 parts In-Stock

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TANS Electronics

Latvia . 5,259 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 2,737 parts In-Stock

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Kulean Microsystems

USA . 2,219 parts In-Stock

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SupplyDigital Components

Austria . 2,215 parts In-Stock

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Kepictronics

USA . 1,290 parts In-Stock

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UHIMA Technologies

Türkiye . 23 parts In-Stock

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Overview

Unleash the power of innovation with the MCH3477-TL-W by Onsemi. Crafted with precision and quality, this small signal field effect transistor is designed to exceed expectations in switching applications. With a single configuration and built-in diode, this N-channel transistor offers seamless performance and reliability. Say goodbye to limitations and hello to endless possibilities with the MCH3477-TL-W. Experience the value and benefits that Onsemi brings to the table, elevating your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making this transistor suitable for various environments.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow, enhancing the performance of the transistor in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with the built-in diode, making it convenient for certain circuit designs.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation onto PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 20 V

With a sufficient breakdown voltage, this transistor can handle a range of voltage levels, offering versatility in circuit design.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and alignment on the PCB, optimizing space usage.

Terminal Form: FLAT

The flat terminal form ensures secure connections and facilitates soldering during assembly.

Operating Mode: ENHANCEMENT MODE

Operates in enhancement mode, providing high efficiency and performance in switching applications.

No. of Terminals: 3

With 3 terminals, this transistor offers simple and straightforward connections in circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package style, suitable for small electronic devices and applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient performance and low power consumption in various applications.

Transistor Element Material: SILICON

Silicon material ensures reliable and stable operation of the transistor under different conditions.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth finish provides good corrosion resistance and enhances solderability for reliable connections.

Maximum Drain Current (ID): 4.5 A

High maximum drain current rating allows for handling larger current loads, suitable for power applications.

Maximum Drain-Source On Resistance: 0.038 ohm

Low on-resistance minimizes power loss and heat generation, ensuring efficient operation of the transistor.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connection options for various designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3477-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.038 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MCH3477-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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