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VEC2616-TL-W

Onsemi

VEC2616-TL-W by Onsemi

Onsemi's VEC2616-TL-W is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has 60V DS breakdown voltage and 3A max drain current. Ideal for switching applications, this MOSFET offers 0.08 ohm RDS(on) and can handle up to 1W power dissipation at 150 °C.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 11,460 parts In-Stock

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Chip Stock

USA . 7,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Digiode

USA . 533 parts In-Stock

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AZTECH Wire

Italy . 790 parts In-Stock

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790

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USA . 27,000 parts In-Stock

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Component Stockers USA

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Emar International I/E

Canada . 15,987 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 7,783 parts In-Stock

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TANS Electronics

Latvia . 7,663 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,560 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 6,015 parts In-Stock

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Kulean Microsystems

USA . 5,887 parts In-Stock

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Corphita

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Corohmni

South Africa . 301 parts In-Stock

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UHIMA Technologies

Türkiye . 27 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the VEC2616-TL-W by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Field Effect Transistors that are perfect for switching applications. With N-channel and P-channel configurations, this transistor offers seamless performance with a minimum DS breakdown voltage of 60V. Its compact package shape and surface mount design make it ideal for various electronic devices. Experience enhanced efficiency and reliability with the VEC2616-TL-W, providing superior value and unmatched benefits to customers seeking top-notch performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight, durable, and cost-effective.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile applications in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and a built-in diode provides flexibility in circuit design and helps in efficient switching operations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Being surface mountable makes it easy to assemble on PCBs, saving space and allowing for automated assembly processes.

Maximum Drain Current (ID): 3 A

The high maximum drain current allows for handling higher power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures stability and reliability in various environmental conditions.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels efficiently.

Maximum Drain-Source On Resistance: 0.08 ohm

The low on-resistance helps in reducing power losses and improving efficiency in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) VEC2616-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VEC2616-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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