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VEC2315-TL-H

Onsemi

VEC2315-TL-H by Onsemi

VEC2315-TL-H by Onsemi is a P-CHANNEL FET with 2 elements and built-in diode, ideal for amplifier applications. It features a 60V DS breakdown voltage, 2.5A max drain current, and 0.137 ohm max on resistance. With a small outline package style and operating temperature up to 150 °C, it's suitable for various electronic designs requiring high performance in compact spaces.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,424 parts In-Stock

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Prism Electronics

USA . 1,656 parts In-Stock

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Digiode

USA . 156 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 1,736 parts In-Stock

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$0.260

100+ parts

$0.240

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$0.220

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1,736

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Corohmni

South Africa . 139 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,653 parts In-Stock

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SupplyDigital Components

Austria . 7,757 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 2,958 parts In-Stock

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Continental Prestige Electronics

USA . 2,753 parts In-Stock

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Problanco Electronics

Mexico . 2,101 parts In-Stock

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Corphita

USA . 601 parts In-Stock

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UHIMA Technologies

Türkiye . 598 parts In-Stock

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TANS Electronics

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Overview

Enhance your amplifier circuits with the VEC2315-TL-H by Onsemi. This high-quality P-Channel small signal FET offers a compact design with built-in diodes for added convenience. Ideal for various applications, this transistor provides reliable performance and efficiency. With a maximum drain current of 2.5 A and a minimum DS breakdown voltage of 60V, this product ensures superior functionality. Upgrade your projects with the value and benefits that Onsemi's VEC2315-TL-H brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the components inside, ensuring durability and long-term reliability.

Polarity or Channel Type: P-CHANNEL

P-Channel FETs are efficient in low power applications and can offer better conduction characteristics compared to N-Channel FETs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having 2 separate elements with a built-in diode allows for flexibility in circuit design and can simplify the overall setup of the amplifier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimized performance in signal amplification circuits.

Surface Mount: YES

Surface mount capability makes installation easier and more compact, suitable for modern electronic devices with limited space.

Minimum DS Breakdown Voltage: 60 V

Higher breakdown voltage provides better protection against voltage spikes and ensures stable operation in varying conditions.

Maximum Drain Current (ID): 2.5 A

Capable of handling higher current loads, making it suitable for medium power applications without risk of overheating or damage.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this FET can handle moderate power levels without risking thermal damage.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers good switching and amplification characteristics, ideal for high-speed operation in electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate reliably at relatively high temperatures, suitable for applications where heat dissipation is a concern.

Technical Specifications

Small Signal Field Effect Transistors (FET) VEC2315-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

2.5 A

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

.137 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

VEC2315-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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