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VEC2415-TL-W

Onsemi

VEC2415-TL-W by Onsemi

Onsemi's VEC2415-TL-W is a N-CHANNEL FET with 2 elements & built-in diode, ideal for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.08 ohm Drain-Source Resistance, and 3A Drain Current. With a max temp of 150 °C, it's suitable for various electronic devices requiring high power dissipation in small outline packages.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

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$0.041

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$0.041

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Element14

Singapore . 875 parts In-Stock

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$1.000

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$0.538

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$0.430

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875

$1.000

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$0.430

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Rochester

USA . 1,179 parts In-Stock

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$0.358

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$0.297

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$0.265

1,179

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$0.265

Verical

USA . 1,179 parts In-Stock

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$0.403

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$0.331

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Chip1Stop

Japan . 2 parts In-Stock

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Digiode

USA . 79 parts In-Stock

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$0.050

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Vyrian

USA . 920 parts In-Stock

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$0.053

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$0.053

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Corphita

USA . 433 parts In-Stock

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$0.048

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Corohmni

South Africa . 83 parts In-Stock

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$0.053

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Continental Prestige Electronics

USA . 963 parts In-Stock

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$0.505

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$0.273

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$0.218

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963

$0.505

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Perfect Parts

USA . 25,592 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,307 parts In-Stock

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SupplyDigital Components

Austria . 4,760 parts In-Stock

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Problanco Electronics

Mexico . 1,117 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 422 parts In-Stock

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Overview

Unlock the power of efficient switching with the VEC2415-TL-W by Onsemi. Crafted by a trusted manufacturer, this small signal field effect transistor offers reliable performance in a variety of applications. With its N-channel polarity and separate configuration, this transistor is designed for enhanced mode operation with built-in diode elements. Boasting a maximum power dissipation of 1W and a minimum DS Breakdown Voltage of 60V, this transistor delivers exceptional value for your projects. Experience the benefits of high-quality technology with the VEC2415-TL-W.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers flexibility and functionality for different circuit designs.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable performance.

Surface Mount: YES

Easy to mount on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 60 V

Can withstand high voltages, making it suitable for various voltage requirements.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of the transistor's conductivity, improving efficiency.

Maximum Power Dissipation (Abs): 1 W

Can handle moderate power dissipation, making it suitable for various applications.

Maximum Drain Current (ID): 3 A

Capable of handling high drain currents, providing versatility in circuit design.

Maximum Drain-Source On Resistance: 0.08 ohm

Low on-resistance ensures minimal voltage drop and power loss in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) VEC2415-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VEC2415-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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