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NVC3S5A51PLZT1G

Onsemi

NVC3S5A51PLZT1G by Onsemi

NVC3S5A51PLZT1G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has 1.7A ID and 0.25 ohm Drain-Source Resistance, suitable for high-temp environments up to 175 °C.

Median Price

$0.243

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5 parts In-Stock

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$0.243

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Digiode

USA . 481 parts In-Stock

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$0.296

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Vyrian

USA . 7,989 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,775 parts In-Stock

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Corphita

USA . 158 parts In-Stock

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$0.281

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Corohmni

South Africa . 382 parts In-Stock

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AZTECH Wire

Italy . 1,039 parts In-Stock

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$15.520

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Perfect Parts

USA . 21,000 parts In-Stock

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Problanco Electronics

Mexico . 6,875 parts In-Stock

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TANS Electronics

Latvia . 5,982 parts In-Stock

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Kulean Microsystems

USA . 4,093 parts In-Stock

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SupplyDigital Components

Austria . 3,959 parts In-Stock

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iodParts Technologies Inc.

India . 2,773 parts In-Stock

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Eastek

USA . 1,000 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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Overview

Enhance your electronic devices with the NVC3S5A51PLZT1G by Onsemi! This P-CHANNEL small signal FET offers high-quality performance and reliability, thanks to Onsemi's reputation as a trusted manufacturer. Ideal for switching applications, this FET provides customers with improved efficiency and power management. With a maximum power dissipation of 1.2W and a minimum DS breakdown voltage of 60V, this FET ensures optimal functionality in various electronic systems. Upgrade your products today with the NVC3S5A51PLZT1G and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Makes the transistor lightweight and cost-effective.

Polarity or Channel Type: P-CHANNEL

Suitable for applications requiring P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with a built-in diode for specific circuit requirements.

Transistor Application: SWITCHING

Ideal for switching applications due to its design and characteristics.

Surface Mount: YES

Easily mountable on circuit boards for efficient assembly.

Minimum DS Breakdown Voltage: 60 V

Can handle high voltage applications without breakdown.

Package Shape: RECTANGULAR

Space-saving design for compact electronic devices.

Transistor Element Material: SILICON

Reliable and widely used semiconductor material for transistors.

Maximum Drain Current (ID): 1.7 A

Capable of handling high drain currents for various applications.

Maximum Drain-Source On Resistance: 0.25 ohm

Low on-resistance for efficient conduction in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) NVC3S5A51PLZT1G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

.25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NVC3S5A51PLZT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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