Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-609 Code: e4; Package Body Material: PLASTIC/EPOXY;
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QUARKTWIN TECHNOLOGY LTD
Small Signal Field Effect Transistors (FET) DMN3071LFR4-7R attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated
Case Connection:
Configuration:
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Maximum Feedback Capacitance (Crss):
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Polarity or Channel Type:
Maximum Power Dissipation (Abs):
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DMN3071LFR4-7R Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - Mult Dev A/T Site 31/Mar/2021
Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.
Chairman and CEO
Keh-Shew Lu
CFO
Brett R. Whitmire
Lead Director
Angie Chen Button
Fab 1
Fabrication
Fab Initiation
1987
China
Shanghai
Wafer Capacity
40,000
Zizhu Fab 1
2013
18,500
G Fab
2008
UK
Greenock
8,000
Keelung Fab
1990
Taiwan
Keelung
58,000
Wuxi Fab
2004
Wuxi
190,000
Shanghai Fab
1993
110,000
1970
22,000
Hsinchu Fab
1998
Hsinchu
38,000
Fab 2
2003
20,000
SPFAB
1995
USA
South Portland
17,000
N/A
1982
Oldham
4,000
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Bkc Semiconductors
Diotec Semiconductor Ag
SS14
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
Continental Device India
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Non Repetitive Peak Forward Current: 40 A; Technology: SCHOTTKY; No. of Elements: 1;
M85049/85-08W02
Amphenol
CIRCULAR CONN ACCESSORY; Shell Sizes: 8; 9; IEC Conformity: NO; MIL-Connector Accessory Name: BAND LOCK ADAPTER; MIL Conformity: YES; DIN Conformity: NO;
LM358N
Silicon Group
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N2222A
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
Itt Semiconductor
L78L05ABZ-AP
STMicroelectronics
L78L05ABZ-AP by STMicroelectronics is a BIPOLAR fixed positive single output standard regulator with an operating temperature range of -40 to 125°C. It has a nominal output voltage of 5V, max load regulation of 0.06%, and can handle a max output current of 0.07A. Ideal for applications requiring stable voltage regulation in various electronic devices.
LM555CMX
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
OPA2277UA
Burr-Brown Corporation
OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
Frontier Electronics
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
LM2931Z-5.0RPG
Onsemi
LM2931Z-5.0RPG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V Nominal Output Voltage, 0.1A Max Output Current, and 6V Min Input Voltage. It operates in temperatures ranging from -40 to 125 °C and is ideal for applications requiring stable voltage regulation in electronic circuits.
TM4C1294NCPDTI3
Texas Instruments
TM4C1294NCPDTI3 by Texas Instruments is a 32-bit microcontroller with Cortex-M4F CPU family. It features 8KB data EEPROM, 20-Ch 12-Bit ADC channels, and 32 DMA channels. Ideal for industrial applications requiring high-speed processing, it offers connectivity options like CAN, Ethernet, I2C, SPI, UART, and USB.
STM32F405RGT6
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
JANTX2N6796
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: METAL; Reference Standard: MIL-19500; Terminal Form: WIRE;
NDS356AP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS126H6327XTSA2
Infineon Technologies
BSS126H6327XTSA2 by Infineon is a N-CHANNEL FET with 600V DS breakdown voltage. It features a built-in diode, operates in depletion mode, and has a max ID of 0.021A. Ideal for applications requiring low feedback capacitance like signal amplification circuits.
2N7002DWQ-13-F
Diodes Incorporated
Diodes Inc. 2N7002DWQ-13-F is a N-channel FET with 60V DS breakdown voltage, 0.23A max drain current, and 7.5 ohm max on resistance. Ideal for switching applications in small outline packages at up to 150°C operating temp.
AO3407A
Alpha & Omega Semiconductor
AO3407A by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.3A Drain Current. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SMALL OUTLINE package, operating at up to 150°C.
FDC6333C
FDC6333C by Onsemi is a small signal field effect transistor (FET) with N-channel and P-channel polarity. It has a min DS breakdown voltage of 30V and max drain current of 2.5A, making it suitable for switching applications. This surface mount transistor operates in enhancement mode and has a max operating temperature of 150°C.
FDV302PD87Z
Fairchild Semiconductor
Fairchild Semiconductor's FDV302PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A ID, and 10 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. Package: PLASTIC/EPOXY, GULL WING terminals, SMALL OUTLINE style.
BS170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Minimum DS Breakdown Voltage: 60 V;
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
NDS7002A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE;
2N7000
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;
ZXM61P03FTA
ZXM61P03FTA by Diodes Inc. is a P-CHANNEL FET with 30V DS breakdown voltage, 1.1A max drain current, and 0.35 ohm max on resistance. It is used for switching applications in small outline packages, featuring MOSFET technology and operating up to 150°C.
NTZD3154NT1G
NTZD3154NT1G by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode, ideal for switching applications. It has a max drain current of 0.54A, on-resistance of 0.55 ohm, and breakdown voltage of 20V. With a small outline package style and operating temperature up to 150°C, it offers efficient performance in various electronic circuits.
BS170_D26Z
BS170_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It is used for SWITCHING applications, featuring 0.5A Drain Current and 5 ohm On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 0.83W and can withstand temperatures up to 150°C.
2N7002K-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's 2N7002K-T1-GE3 is a N-channel FET with 60V breakdown voltage, ideal for switching applications. It features single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.3A and on-resistance of 4 ohm, it offers reliable performance in small outline packages.
FDG6332C
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (Abs) (ID): .6 A; Package Shape: RECTANGULAR;
2N7002KW
2N7002KW by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.31A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
BSS84
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 50 V; Maximum Drain-Source On Resistance: 10 ohm;
FDS6912A
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Moisture Sensitivity Level (MSL): 1; Transistor Application: SWITCHING;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Style (Meter): CYLINDRICAL; Terminal Position: BOTTOM;
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DMN3404L-7
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Terminal Finish: MATTE TIN;
DMN3067LW-7
Small Signal Field-Effect Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN;
DMN3190LDW-7
DMN3190LDW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 1A max drain current, and 0.19 ohm max on resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.
DMN3023L-7
DMN3023L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 6.2A ID, and 0.025 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
DMN3731U-7
DMN3731U-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 0.9A max drain current, and 0.46 ohm max drain-source resistance. It is used for switching applications in small outline packages.
DMN3065LW-7
DMN3065LW-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 4A ID, and 0.052 ohm RDS(on). Ideal for switching applications in enhancement mode, it operates b/w -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
DMN3135LVT-7
DMN3135LVT-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 3.5A max drain current, and 0.047 ohm RDS(on). It's used for switching applications in enhancement mode operation. The transistor comes in a small outline package with gull wing terminals and operates up to 150°C.
DMN3190LDW-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 6;
DMN32D2LDF-7
DMN32D2LDF-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 0.4A max drain current, suitable for switching applications. It features common source configuration, 2 elements with built-in diode, and operates in enhancement mode. With a small outline package style and matte tin terminal finish, it offers efficient performance up to 150°C operating temperature.
DMN3042L-7
DMN3042L-7 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage and 5.8A max drain current, ideal for switching applications. It features a single configuration with built-in diode, 0.0265 ohm RDS(on), and 80pF Crss capacitance. This enhancement mode MOSFET in small outline package is surface mountable for efficient circuit design.
DMN30H4D0L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .47 W; Maximum Feedback Capacitance (Crss): 8.7 pF; Maximum Drain-Source On Resistance: 4 ohm;
DMN3404LQ-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
DMN3008SFG-7
Small Signal Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
DMN3731UFB4-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .97 W; Terminal Position: BOTTOM; Transistor Application: SWITCHING;
DMN3051L-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;
DMN30H4D0LFDE-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30;
DMN30H4D0LFDE-7
Small Signal Field-Effect Transistors; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
DMN3150LW-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 28 V; Transistor Element Material: SILICON;
DMN3730UFB-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .69 W; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 3;
DMN3008SFG-13
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
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