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DMB53D0UDW-7

Diodes Incorporated

DMB53D0UDW-7 by Diodes Incorporated

DMB53D0UDW-7 by Diodes Inc. is a N-channel FET with VCEsat of 0.3V, DS Breakdown Voltage of 50V, and Drain-Source On Resistance of 4Ω. Ideal for switching applications, it features a built-in bipolar transistor and diode in a small outline package suitable for surface mount technology. Operating at up to 150°C, this MOSFET has a max collector current of 0.1A and DC current gain of 200 hFE.

Median Price

$0.217

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 2,180 parts In-Stock

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-

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$0.223

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$0.148

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$0.122

2,180

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$0.223

$0.148

$0.122

Farnell

UK . 1,730 parts In-Stock

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$0.211

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$0.116

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1,730

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$0.211

$0.116

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Distributors (In-Stock)

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Nova Conductors

Japan . 57 parts In-Stock

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$0.106

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57

$0.106

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Chip Stock

USA . 76,000 parts In-Stock

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Vyrian

USA . 2,023 parts In-Stock

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Distributors (Availability)

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Argo Parts USA

USA . 2,672 parts In-Stock

1+ parts

$0.106

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$0.103

2,672

$0.106

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$0.103

Netroflash

USA . 2,000 parts In-Stock

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$0.106

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$0.106

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Continental Prestige Electronics

USA . 1,130 parts In-Stock

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$0.106

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$0.104

1,130

$0.106

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$0.104

Ampacity Inc.

Singapore . 2,547 parts In-Stock

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$0.183

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2,547

$0.183

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AZTECH Wire

Italy . 836 parts In-Stock

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$13.690

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Lixinc

USA . 14,065 parts In-Stock

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Overview

Enhance your electronic projects with the DMB53D0UDW-7 from Diodes Incorporated, a leading manufacturer in small signal field effect transistors. This N-channel transistor with a built-in bipolar transistor and diode is perfect for switching applications. With a low VCEsat of 0.3V and a minimum DS breakdown voltage of 50V, this product offers superior performance and reliability. Its compact size and gull wing terminal form make it suitable for surface mount applications, while its enhancement mode operation ensures efficiency. Trust Diodes Incorporated to deliver high-quality components for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the product suitable for various electronic applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations in electronic circuits.

Configuration: SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

Simplifies circuit design and saves space by integrating multiple components into one package.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and low power consumption.

Surface Mount: YES

Facilitates easy installation and PCB assembly, particularly in compact devices.

Maximum VCEsat: 0.3 V

Low saturation voltage improves efficiency and reduces power dissipation in the transistor.

Minimum DS Breakdown Voltage: 50 V

Provides a high level of protection against voltage spikes and overloads.

Package Shape: RECTANGULAR

Space-saving design that fits well in modern electronics systems.

Terminal Form: GULL WING

Enables easy soldering and PCB mounting for reliable connections.

Operating Mode: ENHANCEMENT MODE

Allows for precise control over the transistor's behavior in the circuit.

No. of Terminals: 6

Provides multiple connection points for flexibility in circuit designs.

Maximum Power Dissipation (Abs): 0.25 W

Efficiently handles power dissipation to prevent overheating and ensure reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact form factor suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and reliability in various operating conditions.

Minimum DC Current Gain (hFE): 200

Provides high gain for amplification purposes in electronic circuits.

Maximum Operating Temperature: 150 °C

Withstands high temperatures for reliable operation in various environments.

Transistor Element Material: SILICON

Offers stability and efficiency in signal processing and switching applications.

Maximum Collector Current (IC): 0.1 A

Handles moderate current levels for proper circuit operation.

Terminal Finish: MATTE TIN

Durable finish that enhances soldering and electrical conductivity.

Maximum Drain Current (ID): 0.16 A

Supports high current flow for demanding applications.

Maximum Drain-Source On Resistance: 4 ohm

Low on-resistance minimizes power losses and improves efficiency.

Terminal Position: DUAL

Offers multiple mounting options for flexibility in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow processes during assembly.

Peak Reflow Temperature °C: 260

Supports high-temperature soldering for reliable connections.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMB53D0UDW-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

200

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.3 V

Trade Compliance

DMB53D0UDW-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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