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DMC1028UFDB-13

Diodes Incorporated

DMC1028UFDB-13 by Diodes Incorporated

DMC1028UFDB-13 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements with built-in diode, and 12V DS breakdown voltage. Ideal for switching applications, it features a max ID of 6A, 0.025Ω RDS(on), and operates in enhancement mode.

Median Price

$0.263

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 30,000 parts In-Stock

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$0.263

30,000

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$0.263

Distributors (In-Stock)

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NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

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$0.350

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$0.350

IBS Electronics

USA . 10,000 parts In-Stock

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$0.273

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$0.273

Vyrian

USA . 7,197 parts In-Stock

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7,197

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 29,548 parts In-Stock

1+ parts

$0.224

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29,548

$0.224

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AZTECH Wire

Italy . 441 parts In-Stock

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$11.640

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441

$11.640

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Continental Prestige Electronics

USA . 2,150 parts In-Stock

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2,150

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Argo Parts USA

USA . 2,097 parts In-Stock

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2,097

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Bastille Electronics

Australia . 550 parts In-Stock

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550

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Overview

Elevate your electronic projects with the DMC1028UFDB-13 by Diodes Incorporated. Crafted with precision and expertise, this small signal field-effect transistor offers reliable performance in switching applications. With separate N-channel and P-channel elements featuring built-in diodes, this transistor ensures seamless operation. Its compact square package with no lead terminals makes installation a breeze. Trust in Diodes Incorporated to deliver cutting-edge technology that exceeds expectations. Upgrade your designs today with the DMC1028UFDB-13 and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

This versatility allows for different circuit designs and applications to be easily implemented.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in this regard.

Minimum DS Breakdown Voltage: 12 V

Provides a sufficient margin for voltage protection, enhancing the reliability of the transistor.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards, saving space and simplifying assembly.

Maximum Drain Current (ID): 6 A

Capable of handling high current loads, making it suitable for a variety of applications.

Maximum Drain-Source On Resistance: 0.025 ohm

Low on-resistance minimizes power loss and improves efficiency in switching operations.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC1028UFDB-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC1028UFDB-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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