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DMC1028UFDB-7

Diodes Incorporated

DMC1028UFDB-7 by Diodes Incorporated

DMC1028UFDB-7 by Diodes Inc. is a Small Signal FET with N/P-channel polarity, 2 elements in separate configuration for switching applications. It features a 12V min DS breakdown voltage, 0.025 ohm max drain-source resistance, and 6A max drain current. This MOSFET comes in a square package with no lead terminals and operates in enhancement mode.

Median Price

$0.516

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 879 parts In-Stock

1+ parts

$1.240

100+ parts

$0.512

1k+ parts

$0.361

10k+ parts

$0.300

879

$1.240

$0.512

$0.361

$0.300

Verical

USA . 15,000 parts In-Stock

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$0.263

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$0.263

Farnell

UK . 3,000 parts In-Stock

1+ parts

-

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$0.383

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$0.223

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$0.221

3,000

-

$0.383

$0.223

$0.221

Element14

Singapore . 3,000 parts In-Stock

1+ parts

-

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$0.648

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$0.435

10k+ parts

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3,000

-

$0.648

$0.435

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.353

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50

$0.353

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NAC Semi

USA . 24,000 parts In-Stock

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$0.294

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$0.294

Vyrian

USA . 5,475 parts In-Stock

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5,475

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,041 parts In-Stock

1+ parts

$0.224

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5,041

$0.224

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Continental Prestige Electronics

USA . 2,534 parts In-Stock

1+ parts

$0.353

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$0.346

2,534

$0.353

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$0.346

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.353

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$0.353

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Argo Parts USA

USA . 274 parts In-Stock

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$0.353

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$0.342

274

$0.353

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$0.342

Corohmni

South Africa . 644 parts In-Stock

1+ parts

$1.531

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644

$1.531

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.293

100+ parts

$2.087

1k+ parts

$1.880

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500

$2.293

$2.087

$1.880

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Component Connect

USA . 41,279 parts In-Stock

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Perfect Parts

USA . 23,520 parts In-Stock

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Lixinc

USA . 9,479 parts In-Stock

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9,479

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Eastek

USA . 9,000 parts In-Stock

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$0.340

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9,000

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$0.340

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Overview

Unlock the power of small signal field effect transistors with the DMC1028UFDB-7 by Diodes Incorporated. Known for their superior quality and innovative technology, Diodes Incorporated delivers cutting-edge solutions for a wide range of applications. With separate N-channel and P-channel elements, built-in diode, and a maximum drain current of 6A, this transistor is perfect for switching applications. Say goodbye to resistance with a maximum drain-source on resistance of 0.025 ohm. Experience enhanced performance and reliability with the DMC1028UFDB-7, the ultimate choice for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for versatile use in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode in the configuration enhances the switching performance of the transistor, making it more efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Being surface mountable makes the transistor easy to integrate into circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 12 V

The minimum breakdown voltage of 12V ensures reliable operation and protection against voltage spikes.

Package Shape: SQUARE

The square package shape is compact and facilitates efficient placement on a circuit board.

Terminal Form: NO LEAD

The absence of leads simplifies the mounting process and reduces the risk of damage during assembly.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation provides better control and performance in switching applications.

No. of Elements: 2

Having 2 elements allows for more flexibility in circuit design and application.

No. of Terminals: 6

With 6 terminals, this transistor offers multiple connection points for versatile use in different circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology ensures high performance, efficiency, and reliability.

Transistor Element Material: SILICON

Silicon material offers excellent semiconductor properties, making the transistor reliable and durable.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish of nickel, palladium, and gold provides excellent connectivity and corrosion resistance.

Maximum Drain Current (ID): 6 A

With a maximum drain current of 6A, this transistor can handle high current loads in various applications.

Maximum Drain-Source On Resistance: 0.025 ohm

The low drain-source on resistance of 0.025 ohm minimizes power loss and improves efficiency in switching operations.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and connection options.

Case Connection: DRAIN

The case connection at the drain terminal simplifies the circuit design and enhances performance in switching applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, the transistor can withstand high-temperature soldering processes without damage.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC1028UFDB-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC1028UFDB-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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