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DMC1229UFDB-7

Diodes Incorporated

DMC1229UFDB-7 by Diodes Incorporated

DMC1229UFDB-7 by Diodes Inc. is a Small Signal FET with N/P-channel types, 2 elements with built-in diode, and 12V DS breakdown voltage. Ideal for switching applications, it has a max drain current of 5.6A, 0.029 ohm RDS(on), and operates b/w -55 to 150°C.

Median Price

$0.305

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 909 parts In-Stock

1+ parts

$0.822

100+ parts

$0.365

1k+ parts

$0.269

10k+ parts

-

909

$0.822

$0.365

$0.269

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DigiKey

USA . 710 parts In-Stock

1+ parts

$0.920

100+ parts

$0.372

1k+ parts

$0.257

10k+ parts

$0.194

710

$0.920

$0.372

$0.257

$0.194

Mouser Electronics

USA . 462 parts In-Stock

1+ parts

$1.130

100+ parts

$0.501

1k+ parts

$0.290

10k+ parts

$0.214

462

$1.130

$0.501

$0.290

$0.214

Verical

USA . 231,000 parts In-Stock

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-

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$0.136

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$0.136

Arrow

USA . 3,000 parts In-Stock

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$0.127

3,000

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-

$0.127

Farnell

UK . 270 parts In-Stock

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$0.295

1k+ parts

$0.160

10k+ parts

$0.158

270

-

$0.295

$0.160

$0.158

Element14

Singapore . 270 parts In-Stock

1+ parts

-

100+ parts

$0.305

1k+ parts

$0.170

10k+ parts

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270

-

$0.305

$0.170

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Distributors (In-Stock)

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Chip Stock

USA . 170,968 parts In-Stock

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170,968

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IBS Electronics

USA . 132,000 parts In-Stock

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$0.136

132,000

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-

-

$0.136

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

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$0.177

15,000

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-

$0.177

Cyclops Electronics Ltd

UK . 9,000 parts In-Stock

1+ parts

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9,000

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Sensible Micro Corp

USA . 1,520 parts In-Stock

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1,520

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Kepictronics

USA . 31,437 parts In-Stock

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31,437

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Lixinc

USA . 10,992 parts In-Stock

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10,992

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Continental Prestige Electronics

USA . 2,805 parts In-Stock

1+ parts

-

100+ parts

$0.248

1k+ parts

$0.150

10k+ parts

$0.124

2,805

-

$0.248

$0.150

$0.124

Native Components

USA . 923 parts In-Stock

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923

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Northwest PG Solutions

USA . 207 parts In-Stock

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207

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Overview

Enhance your electronic projects with the DMC1229UFDB-7 by Diodes Incorporated. As a leading manufacturer in the industry of Small Signal Field Effect Transistors (FET), Diodes Incorporated ensures top-notch quality and reliability in their products. Ideal for switching applications, this transistor offers a seamless performance with a maximum drain current of 5.6 A and a minimum DS breakdown voltage of 12 V. With its compact square package style and no lead terminal form, the DMC1229UFDB-7 is easy to integrate into your designs. Experience enhanced efficiency and superior functionality with this exceptional product from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and applications.

Transistor Application: SWITCHING

Ideal for use in switching applications due to its fast response time and low power dissipation.

Maximum Drain Current (Abs) (ID): 5.6 A

With a high maximum drain current, this transistor can handle heavy loads without overheating.

Maximum Power Dissipation (Abs): 2.2 W

Efficient power dissipation ensures that the transistor operates within its safe temperature range.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, making it suitable for a wide range of environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC1229UFDB-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

5.6 A

Maximum Drain Current (ID):

5.6 A

Maximum Drain-Source On Resistance:

.029 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC1229UFDB-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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