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DMC1229UFDB-13

Diodes Incorporated

DMC1229UFDB-13 by Diodes Incorporated

DMC1229UFDB-13 by Diodes Inc. is a Small Signal FET with N/P-channel polarity, 2 elements with built-in diode configuration, and 5.6A max drain current. Ideal for switching applications, it operates in enhancement mode with -55 to 150°C temp range and 0.029 ohm max drain-source resistance.

Median Price

$0.532

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,947 parts In-Stock

1+ parts

$0.920

100+ parts

$0.372

1k+ parts

$0.257

10k+ parts

$0.192

1,947

$0.920

$0.372

$0.257

$0.192

Mouser Electronics

USA . 42 parts In-Stock

1+ parts

$0.990

100+ parts

$0.423

1k+ parts

$0.251

10k+ parts

$0.187

42

$0.990

$0.423

$0.251

$0.187

Arrow

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.143

10,000

-

-

-

$0.143

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.142

10,000

-

-

-

$0.142

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

$0.154

100+ parts

-

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750

$0.154

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Flip Electronics

USA . 80,000 parts In-Stock

1+ parts

$0.827

100+ parts

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80,000

$0.827

-

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Chip Stock

USA . 170,823 parts In-Stock

1+ parts

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170,823

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NAC Semi

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

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$0.255

40,000

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-

-

$0.255

Vyrian

USA . 12,143 parts In-Stock

1+ parts

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12,143

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 13,440 parts In-Stock

1+ parts

$0.116

100+ parts

-

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13,440

$0.116

-

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Semicontronic

India . 13,277 parts In-Stock

1+ parts

$0.116

100+ parts

$0.113

1k+ parts

$0.113

10k+ parts

-

13,277

$0.116

$0.113

$0.113

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Continental Prestige Electronics

USA . 1,726 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

-

10k+ parts

$0.151

1,726

$0.154

-

-

$0.151

Argo Parts USA

USA . 14 parts In-Stock

1+ parts

$0.154

100+ parts

-

1k+ parts

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10k+ parts

$0.150

14

$0.154

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-

$0.150

Corohmni

South Africa . 439 parts In-Stock

1+ parts

$0.518

100+ parts

-

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439

$0.518

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Aztec Data Supply Inc.

USA . 190 parts In-Stock

1+ parts

$0.740

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190

$0.740

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.773

100+ parts

$0.703

1k+ parts

$0.634

10k+ parts

-

100

$0.773

$0.703

$0.634

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Eastek

USA . 17,417 parts In-Stock

1+ parts

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17,417

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ChipstoGo Electronic ltd

UK . 3,588 parts In-Stock

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3,588

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Overview

Enhance your electronic projects with the high-quality DMC1229UFDB-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers reliable and efficient small signal field effect transistors like this one that are perfect for switching applications. With a maximum power dissipation of 2.2 W and a maximum drain current of 5.6 A, this transistor offers exceptional performance and durability. Whether you're working on consumer electronics or industrial equipment, this N-channel and P-channel transistor will meet your needs with its enhanced mode operation and low drain-source on resistance. Upgrade your designs today with the DMC1229UFDB-13 and experience the value it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the FET, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and compatibility with various applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode enhances the performance of the FET and allows for more efficient switching.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it a reliable choice for circuits that require rapid on/off states.

Surface Mount: YES

Easy to install and suitable for automated assembly processes, making it a convenient choice for mass production.

Minimum DS Breakdown Voltage: 12 V

With a minimum breakdown voltage of 12V, this FET can handle higher voltages without getting damaged.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easy to control and offer low on-resistance, making them efficient for switching applications.

Maximum Drain Current (Abs) (ID): 5.6 A

Capable of handling high current loads, ensuring reliable performance in demanding circuit requirements.

Maximum Power Dissipation (Abs): 2.2 W

With a maximum power dissipation of 2.2W, this FET can handle heat efficiently, improving reliability and longevity.

Maximum Operating Temperature: 150 °C

Suitable for use in high-temperature environments, ensuring stable performance even under extreme conditions.

Minimum Operating Temperature: -55 °C

Capable of functioning in cold temperatures, making it suitable for a wide range of operating conditions.

Reference Standard: AEC-Q101

Compliance with automotive-grade standards ensures high quality and reliability for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMC1229UFDB-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (Abs) (ID):

5.6 A

Maximum Drain Current (ID):

5.6 A

Maximum Drain-Source On Resistance:

.029 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMC1229UFDB-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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