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BSS308PEL6327HTSA1

Infineon Technologies

BSS308PEL6327HTSA1 by Infineon Technologies

Infineon BSS308PEL6327HTSA1 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 2A ID, and 0.08 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Features include SINGLE configuration with built-in diode, GULL WING terminals, and ENHANCEMENT MODE operation.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Vyrian

USA . 2,498 parts In-Stock

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VNN

France . 1,721 parts In-Stock

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Digiode

USA . 521 parts In-Stock

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Nova Conductors

Japan . 22 parts In-Stock

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Modulus Dynamics

Lithuania . 6,238 parts In-Stock

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$0.530

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$0.509

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$0.488

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6,238

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Aztec Data Supply Inc.

USA . 1,258 parts In-Stock

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$0.970

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Corohmni

South Africa . 310 parts In-Stock

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$1.466

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AZTECH Wire

Italy . 763 parts In-Stock

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$11.955

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Ampacity Inc.

Singapore . 729 parts In-Stock

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$21.050

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Semicontronic

India . 1,332 parts In-Stock

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$53.050

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$51.724

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$51.458

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Microchip USA

USA . 5,906 parts In-Stock

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Continental Prestige Electronics

USA . 3,059 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Corphita

USA . 132 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Upgrade your electronics with the BSS308PEL6327HTSA1 from Infineon Technologies. As a leader in the industry, Infineon ensures top-notch quality and reliability in all their products. This P-Channel Small Signal Field Effect Transistor (FET) with a built-in diode offers enhanced performance and efficiency for a wide range of applications. Whether you're working on consumer electronics, automotive systems, or industrial equipment, this transistor delivers exceptional value and benefits, making it the perfect choice for your next project. Elevate your designs with the trusted technology of Infineon.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their high input impedance, making them ideal for low power consumption applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse bias.

Surface Mount: YES

Surface-mount transistors are easy to use and offer efficient PCB assembly.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage applications effectively.

Maximum Drain Current (ID): 2 A

Capable of handling a high drain current of 2A, suitable for medium to high power applications.

Maximum Drain-Source On Resistance: 0.08 ohm

Low on-resistance helps in reducing power dissipation and improving efficiency of the circuit.

Maximum Feedback Capacitance (Crss): 18 pF

Low feedback capacitance minimizes the chances of parasitic oscillations in the circuit.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures reliability and quality for automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS308PEL6327HTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

18 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSS308PEL6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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