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BSS308PEH6327

Infineon Technologies

BSS308PEH6327 by Infineon Technologies

BSS308PEH6327 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 2A Drain Current, and 0.08 ohm On Resistance. Ideal for small signal applications, it features a built-in diode in a plastic package suitable for surface mount technology. Operating in enhancement mode at up to 150°C, it offers high performance in compact designs.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 11 parts In-Stock

1+ parts

$0.124

100+ parts

$0.066

1k+ parts

$0.062

10k+ parts

$0.056

11

$0.124

$0.066

$0.062

$0.056

Digiode

USA . 946 parts In-Stock

1+ parts

$0.370

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946

$0.370

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Rutronik

Germany . 468,000 parts In-Stock

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$0.069

468,000

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$0.069

Vyrian

USA . 159,164 parts In-Stock

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Cyclops Electronics Ltd

UK . 72,000 parts In-Stock

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VNN

France . 23,304 parts In-Stock

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Flip Electronics

USA . 18,000 parts In-Stock

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Infinite Electronics LLP

India . 6,000 parts In-Stock

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Sensible Micro Corp

USA . 2,513 parts In-Stock

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2,513

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Bristol Electronics

USA . 432 parts In-Stock

1+ parts

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$0.188

1k+ parts

$0.113

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432

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$0.188

$0.113

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corphita

USA . 390 parts In-Stock

1+ parts

$0.351

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-

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390

$0.351

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Semicontronic

India . 142,770 parts In-Stock

1+ parts

$0.357

100+ parts

$0.348

1k+ parts

$0.346

10k+ parts

-

142,770

$0.357

$0.348

$0.346

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$0.726

100+ parts

$0.690

1k+ parts

$0.690

10k+ parts

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1,000

$0.726

$0.690

$0.690

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Ampacity Inc.

Singapore . 142,985 parts In-Stock

1+ parts

$0.780

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142,985

$0.780

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Corohmni

South Africa . 1,023 parts In-Stock

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$0.785

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$0.785

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Modulus Dynamics

Lithuania . 25,892 parts In-Stock

1+ parts

$0.972

100+ parts

$0.933

1k+ parts

$0.894

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-

25,892

$0.972

$0.933

$0.894

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Perfect Parts

USA . 224,000 parts In-Stock

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GreenTree Electronics

Israel . 180,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Metaverse IC Inc.

Canada . 48,790 parts In-Stock

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A-Z Elektronik GmbH

Germany . 25,501 parts In-Stock

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Lixinc

USA . 6,335 parts In-Stock

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Continental Prestige Electronics

USA . 6,121 parts In-Stock

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Argo Parts USA

USA . 3,910 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Futuretech Components

Singapore . 2,080 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,200 parts In-Stock

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Kepictronics

USA . 1,198 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality BSS308PEH6327 P-Channel Small Signal Field Effect Transistor by Infineon Technologies. This single transistor with a built-in diode offers superior performance and reliability in a compact package, making it ideal for a wide range of applications. Experience enhanced efficiency and power handling capabilities with this state-of-the-art enhancement mode transistor. Trust Infineon's expertise to deliver innovative solutions that meet your needs and exceed your expectations. Upgrade to the BSS308PEH6327 today and unlock the full potential of your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

Allows for efficient current flow, suitable for specific circuit designs that require P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for reverse polarity protection, enhancing the reliability of the transistor.

Surface Mount: YES

Facilitates easy installation onto circuit boards, making it suitable for automated assembly processes.

Minimum DS Breakdown Voltage: 30 V

Withstands high voltage levels, suitable for applications requiring robust voltage protection.

Package Shape: RECTANGULAR

Allows for efficient placement and space utilization on circuit boards.

Terminal Form: GULL WING

Enables secure soldering connections, preventing disconnection or contact issues.

Operating Mode: ENHANCEMENT MODE

Provides enhanced control over the transistor's conductivity, allowing for precise regulation of current flow.

Maximum Drain Current (Abs) (ID): 2 A

Capable of handling high current loads, suitable for power amplification or switching applications.

Maximum Power Dissipation (Abs): 0.5 W

Efficiently dissipates heat generated during operation, preventing overheating and ensuring stable performance.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on circuit boards, ideal for applications with limited space constraints.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and low power consumption, suitable for battery-powered devices or low-power applications.

Maximum Operating Temperature: 150 °C

Withstands high temperature environments, ensuring reliable performance in harsh operating conditions.

Transistor Element Material: SILICON

Provides excellent electronic properties, offering high conductivity and reliability for the transistor.

Terminal Finish: MATTE TIN

Ensures good solderability and electrical conductivity, making it easy to connect the transistor in circuits.

Maximum Drain-Source On Resistance: 0.08 ohm

Low on-resistance minimizes power losses and improves efficiency in switching applications.

Terminal Position: DUAL

Allows for versatile connections, accommodating different circuit layouts and configurations.

Maximum Feedback Capacitance (Crss): 18 pF

Low feedback capacitance reduces signal distortion and improves high-frequency response in amplifier circuits.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS308PEH6327 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

2 A

Maximum Drain Current (ID):

2 A

Maximum Drain-Source On Resistance:

.08 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

18 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSS308PEH6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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