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MCH3484-TL-W

Onsemi

MCH3484-TL-W by Onsemi

MCH3484-TL-W by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 4.5A ID, and 0.04 ohm RDS(on). Ideal for small signal applications in electronics due to its 1W power dissipation, ENHANCEMENT MODE operation, and SILICON transistor element material.

Median Price

$1.480

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,935 parts In-Stock

1+ parts

$1.480

100+ parts

$0.397

1k+ parts

$0.234

10k+ parts

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2,935

$1.480

$0.397

$0.234

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Distributors (In-Stock)

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Digiode

USA . 1,277 parts In-Stock

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$1.406

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$1.406

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Flip Electronics

USA . 141,000 parts In-Stock

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141,000

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Cyclops Electronics Ltd

UK . 62,195 parts In-Stock

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Chip Stock

USA . 27,425 parts In-Stock

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Vyrian

USA . 7,051 parts In-Stock

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7,051

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Sensible Micro Corp

USA . 2,612 parts In-Stock

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Bristol Electronics

USA . 686 parts In-Stock

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686

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Prism Electronics

USA . 25 parts In-Stock

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25

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Distributors (Availability)

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Component Stockers USA

USA . 228,213 parts In-Stock

1+ parts

$0.260

100+ parts

$0.170

1k+ parts

$0.130

10k+ parts

$0.130

228,213

$0.260

$0.170

$0.130

$0.130

Corphita

USA . 2,289 parts In-Stock

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$1.332

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2,289

$1.332

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Corohmni

South Africa . 210 parts In-Stock

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$1.480

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210

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AZTECH Wire

Italy . 383 parts In-Stock

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$20.490

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383

$20.490

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Perfect Parts

USA . 102,144 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 81,000 parts In-Stock

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ChipstoGo Electronic ltd

UK . 62,445 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 4,746 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 3,507 parts In-Stock

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SupplyDigital Components

Austria . 1,865 parts In-Stock

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Kulean Microsystems

USA . 846 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Overview

Unlock the power of innovation with the MCH3484-TL-W Small Signal Field Effect Transistor by Onsemi. This high-quality N-channel FET offers customers a reliable and efficient solution for a wide range of applications. With a built-in diode and enhanced mode operation, this transistor provides maximum power dissipation and minimum DS breakdown voltage, ensuring optimal performance in any project. Trust in Onsemi's expertise in semiconductor technology and choose the MCH3484-TL-W for unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and lower on-state resistance compared to P-channel transistors, making this product a good choice for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient control of current flow and can protect the circuit from reverse voltage, enhancing the overall performance of the transistor.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on PCBs, making this transistor suitable for compact and densely packed electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltages without the risk of damage, making it versatile for various circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration onto PCBs and allows for efficient use of space, which is ideal for compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and have faster switching speeds, making this product suitable for applications requiring precise control and high performance.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating, ensuring reliable operation in various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for efficient heat dissipation, making it suitable for compact electronic devices with limited space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability, making this transistor a good choice for applications requiring stable and efficient operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments without compromising its performance, ensuring reliability in various conditions.

Transistor Element Material: SILICON

Silicon transistors are known for their high switching speeds and low on-state resistance, making this product suitable for high-frequency applications and efficient power management.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides excellent solderability and conductivity, ensuring a reliable connection in the circuit and enhancing the overall performance of the transistor.

Maximum Drain Current (ID): 4.5 A

With a maximum drain current of 4.5A, this transistor can handle high current loads without overheating, making it suitable for power electronics and motor control applications.

Maximum Drain-Source On Resistance: 0.04 ohm

The low on-resistance of 0.04 ohms ensures efficient power transfer and minimal voltage drop across the transistor, maximizing the performance and efficiency of the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options on the PCB, making it easier to integrate the transistor into different circuit layouts and configurations.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes without damage, ensuring reliable and efficient assembly in manufacturing.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C enables quick and reliable soldering of the transistor to the PCB, ensuring a secure connection and optimal performance in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) MCH3484-TL-W attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

4.5 A

Maximum Drain-Source On Resistance:

.04 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

MCH3484-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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