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BSS159NL6327HTSA1

Infineon Technologies

BSS159NL6327HTSA1 by Infineon Technologies

Infineon's BSS159NL6327HTSA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.23A ID, and 3.5Ω RDS(ON). Ideal for small outline applications in automotive electronics due to AEC-Q101 standard compliance and low feedback capacitance of 5pF.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 5,668 parts In-Stock

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VNN

France . 3,400 parts In-Stock

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Digiode

USA . 670 parts In-Stock

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670

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Nova Conductors

Japan . 61 parts In-Stock

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Corohmni

South Africa . 381 parts In-Stock

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$0.344

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Aztec Data Supply Inc.

USA . 1,252 parts In-Stock

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$1.170

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Modulus Dynamics

Lithuania . 5,885 parts In-Stock

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$1.526

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$1.465

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$1.404

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$1.526

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AZTECH Wire

Italy . 802 parts In-Stock

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$17.938

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Ampacity Inc.

Singapore . 513 parts In-Stock

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$29.050

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Semicontronic

India . 800 parts In-Stock

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$40.050

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$39.049

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$38.848

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$38.848

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Component Stockers USA

USA . 491 parts In-Stock

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$99.990

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Continental Prestige Electronics

USA . 2,762 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Microchip USA

USA . 352 parts In-Stock

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Corphita

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Argo Parts USA

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Advanced Electronics

New Zealand . 63 parts In-Stock

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Overview

Upgrade your electronics with the BSS159NL6327HTSA1 from Infineon Technologies, a leading manufacturer known for top-quality components. This small signal field effect transistor (FET) offers enhanced performance and reliability for a variety of applications. With its N-channel configuration and built-in diode, this transistor is perfect for power management, amplification, and signal processing. Trust in the value and benefits of Infineon's technology to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for portable devices.

Polarity or Channel Type: N-CHANNEL

Provides improved efficiency and performance for applications requiring an N-channel FET.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode, saving space and reducing components needed.

Surface Mount: YES

Allows for easy and convenient mounting on a PCB, saving assembly time and space.

Minimum DS Breakdown Voltage: 60 V

Offers a high breakdown voltage, ensuring reliable operation in high voltage applications.

Package Shape: RECTANGULAR

Fits well in compact spaces and allows for efficient PCB layout.

Terminal Form: GULL WING

Provides easy soldering and strong mechanical stability for reliable connections.

Operating Mode: ENHANCEMENT MODE

Enables faster switching speeds and lower power consumption for improved performance.

No. of Terminals: 3

Offers a simple and compact design with just 3 terminals for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for a more compact overall design.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high efficiency and low noise performance for various applications.

Transistor Element Material: SILICON

Ensures reliable and consistent performance over a wide range of operating conditions.

Maximum Drain Current (ID): 0.23 A

Provides sufficient current handling capability for a range of low-power applications.

Maximum Drain-Source On Resistance: 3.5 ohm

Offers low on resistance for minimal power loss and improved efficiency.

Terminal Position: DUAL

Allows for easy connection to external components and flexible circuit integration.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance results in improved high-frequency performance and stability.

Reference Standard: AEC-Q101

Complies with automotive-grade standards for quality and reliability in harsh environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS159NL6327HTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.23 A

Maximum Drain-Source On Resistance:

3.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSS159NL6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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