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BSS139L6327HTSA1

Infineon Technologies

BSS139L6327HTSA1 by Infineon Technologies

Infineon's BSS139L6327HTSA1 is a N-CHANNEL FET with 250V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it features 0.1A ID and 30 ohm RDS(on). Widely used in automotive applications due to AEC-Q101 standard compliance.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 8,721 parts In-Stock

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VNN

France . 2,348 parts In-Stock

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Digiode

USA . 443 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,028 parts In-Stock

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$0.350

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Corohmni

South Africa . 210 parts In-Stock

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$1.183

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Modulus Dynamics

Lithuania . 9,818 parts In-Stock

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$1.965

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$1.886

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$1.808

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AZTECH Wire

Italy . 362 parts In-Stock

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$13.582

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Ampacity Inc.

Singapore . 1,203 parts In-Stock

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$22.050

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Semicontronic

India . 1,253 parts In-Stock

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$47.050

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$45.874

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$45.638

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QUARKTWIN TECHNOLOGY LTD

USA . 10,753 parts In-Stock

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Continental Prestige Electronics

USA . 5,545 parts In-Stock

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Argo Parts USA

USA . 3,281 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Corphita

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Microchip USA

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Advanced Electronics

New Zealand . 22 parts In-Stock

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Overview

Elevate your electronic designs with the BSS139L6327HTSA1 by Infineon Technologies. Crafted with precision and expertise, this N-channel small signal field effect transistor boasts a single configuration with a built-in diode for added convenience. Ideal for a wide range of applications, this FET offers a minimum DS breakdown voltage of 250V and maximum drain current of 0.1A, providing reliable performance in depletion mode operation. With its high-quality construction and AEC-Q101 reference standard, this transistor guarantees superior functionality and efficiency, making it a valuable asset for your projects. Choose excellence, choose the BSS139L6327HTSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility, making them suitable for high-speed and high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current flow, enhancing overall efficiency.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 250 V

A high breakdown voltage ensures the transistor can handle high voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape makes the transistor easy to handle and install, simplifying the manufacturing process.

Terminal Form: GULL WING

Gull wing terminals provide a secure and reliable connection to the PCB, reducing the risk of electrical discontinuity.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer precise control over the current flow, making them ideal for amplification and switching applications.

No. of Terminals: 3

Having 3 terminals allows for flexible and versatile circuit configurations, enabling a wide range of functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high input impedance and low power consumption, making the transistor suitable for low-power applications.

Transistor Element Material: SILICON

Silicon transistors are widely used due to their reliability, stability, and high performance in various operating conditions.

Maximum Drain Current (ID): 0.1 A

With a maximum drain current of 0.1 A, this transistor can handle moderate power levels in circuits without overheating.

Maximum Drain-Source On Resistance: 30 ohm

The low on-resistance ensures minimal power loss and efficient operation of the transistor in various applications.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and easy integration into existing electronic systems.

Maximum Feedback Capacitance (Crss): 3.3 pF

Low feedback capacitance helps reduce signal distortion and improve the overall performance of the transistor in RF applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures the transistor meets automotive industry standards for reliability, quality, and performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSS139L6327HTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

3.3 pF

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSS139L6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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