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DMT4031LSD-13

Diodes Incorporated

DMT4031LSD-13 by Diodes Incorporated

DMT4031LSD-13 by Diodes Inc. is a N-channel FET with 40V DS breakdown voltage, 36A IDM, and 0.023 ohm RDS(on). Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating from -55 to 150 °C, this MOSFET offers high power dissipation of 1.5W and peak reflow temp of 260C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,957 parts In-Stock

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8,957

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,457 parts In-Stock

1+ parts

$0.570

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4,457

$0.570

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Corohmni

South Africa . 144 parts In-Stock

1+ parts

$1.876

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144

$1.876

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AZTECH Wire

Italy . 780 parts In-Stock

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$7.475

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780

$7.475

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Ampacity Inc.

Singapore . 1,606 parts In-Stock

1+ parts

$24.050

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1,606

$24.050

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Continental Prestige Electronics

USA . 3,633 parts In-Stock

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3,633

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Argo Parts USA

USA . 1,057 parts In-Stock

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1,057

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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Overview

Enhance your electronic devices with the DMT4031LSD-13 by Diodes Incorporated, a high-quality Small Signal Field Effect Transistor designed for switching applications. With a maximum drain current of 6.3 A and a low on-resistance of only 0.023 ohm, this N-CHANNEL transistor offers superb performance and reliability. Its compact package and matte tin finish make it ideal for surface mount applications, ensuring ease of installation. Trust in Diodes Incorporated's expertise and invest in the DMT4031LSD-13 to elevate the efficiency and functionality of your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good mechanical strength and protection for the internal components, making the transistor durable and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally have lower ON resistances and higher switching speeds compared to P-channel FETs, making them suitable for high-performance applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The built-in diode allows for efficient control of current flow and switching, enhancing the overall performance of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in such scenarios.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 40 V

With a high breakdown voltage, this transistor can handle higher voltages without breakdown, ensuring reliability in various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for operation in harsh environments without performance degradation.

Maximum Drain-Source On Resistance: 0.023 ohm

The low ON resistance results in minimal power loss and heat generation, making the transistor energy-efficient.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMT4031LSD-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Avalanche Energy Rating (EAS):

7.6 mJ

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

6.3 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

36 A

Reference Standard:

MIL-STD-202

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMT4031LSD-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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