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2N6660JTX02

Vishay Intertechnology

2N6660JTX02 by Vishay Intertechnology

Vishay Intertechnology's 2N6660JTX02 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.99A max drain current. Ideal for amplifier applications, it features a built-in diode, 3 ohm max on resistance, and operates in enhancement mode at up to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 16,581 parts In-Stock

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Vyrian

USA . 5,202 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 431 parts In-Stock

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$10.165

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431

$10.165

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Ampacity Inc.

Singapore . 363 parts In-Stock

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$17.050

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363

$17.050

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QUARKTWIN TECHNOLOGY LTD

USA . 3,333 parts In-Stock

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3,333

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Bastille Electronics

Australia . 800 parts In-Stock

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800

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Overview

Unlock the power of innovation with the 2N6660JTX02 by Vishay Intertechnology. Crafted with precision and expertise, this small signal field effect transistor offers unparalleled performance and reliability. Ideal for amplifier applications, this N-channel transistor boasts a built-in diode for added convenience. With a maximum drain current of 0.99 A and a minimum DS breakdown voltage of 60 V, this transistor delivers exceptional power and efficiency. Trust Vishay Intertechnology to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the 2N6660JTX02 today and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good thermal conductivity, improving the overall heat dissipation of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance characteristics such as higher mobility and faster switching speeds compared to P-channel transistors.

Minimum DS Breakdown Voltage: 60 V

High breakdown voltage allows for operation in circuits with higher voltages, providing reliability and safety in various applications.

Maximum Drain Current (Abs): 0.99 A

High drain current rating ensures the transistor can handle high current loads without overheating or failing prematurely.

Maximum Power Dissipation (Abs): 6.25 W

High power dissipation capability ensures the transistor can handle high power levels without getting damaged, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

High operating temperature rating allows the transistor to operate reliably in a wide range of temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6660JTX02 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.99 A

Maximum Drain Current (ID):

.99 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6660JTX02 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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