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2N6660-E3

Vishay Intertechnology

2N6660-E3 by Vishay Intertechnology

2N6660-E3 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.99A Drain Current, and 6.25W Power Dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and built-in DIODE configuration.

Median Price

$18.973

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 67 parts In-Stock

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$18.973

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67

$18.973

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Vyrian

USA . 7,151 parts In-Stock

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VNN

France . 3,718 parts In-Stock

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3,718

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 300 parts In-Stock

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$16.381

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300

$16.381

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Ampacity Inc.

Singapore . 1,164 parts In-Stock

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$26.050

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Glotronic Ltd.

UK . 3,140 parts In-Stock

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3,140

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Netroflash

USA . 100 parts In-Stock

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$18.594

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$18.024

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$17.645

100

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$18.594

$18.024

$17.645

Perfect Parts

USA . 87 parts In-Stock

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Overview

Discover the power of the 2N6660-E3 by Vishay Intertechnology, a top-quality N-CHANNEL Small Signal Field Effect Transistor with a built-in diode. Perfect for amplifier applications, this transistor offers reliable performance and exceptional value. With a maximum drain current of 0.99 A and a minimum DS breakdown voltage of 60 V, this product ensures efficient operation and long-lasting durability. Trust Vishay Intertechnology for high-quality components that deliver superior results every time.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides better heat dissipation, ensuring the transistor can operate at high power without overheating.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher electron mobility and faster switching speeds compared to P-channel transistors, making them ideal for amplifier applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies the circuit design and provides protection against reverse current flow, enhancing the reliability of the amplifier.

Minimum DS Breakdown Voltage: 60 V

High breakdown voltage ensures that the transistor can handle higher voltages, making it suitable for amplifier applications where voltage spikes may occur.

Maximum Drain Current: 0.99 A

High maximum drain current rating allows the transistor to handle higher power levels, making it suitable for amplifier applications requiring high output power.

Maximum Power Dissipation: 6.25 W

High power dissipation rating ensures that the transistor can handle high power levels without overheating, enabling it to operate reliably in amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures, ensuring its performance and reliability in amplifier applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6660-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.99 A

Maximum Drain Current (ID):

.99 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N6660-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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