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2N6660JANTX

Vishay Intertechnology

2N6660JANTX by Vishay Intertechnology

2N6660JANTX by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.99A ID, and 3Ω RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. MIL standard compliant, it features METAL-OXIDE SEMICONDUCTOR tech in a CYLINDRICAL package with 3 terminals.

Median Price

$82.411

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Freelance Electronics

USA . 1 parts In-Stock

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VNN

France . 1,445 parts In-Stock

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Vyrian

USA . 1,265 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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Holdelec - ElecDif-Pro

France . 30 parts In-Stock

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AZTECH Wire

Italy . 229 parts In-Stock

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Ampacity Inc.

Singapore . 1,349 parts In-Stock

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$11.050

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Bastille Electronics

Australia . 50 parts In-Stock

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Overview

Elevate your electronic designs with the 2N6660JANTX by Vishay Intertechnology, a top-quality small signal field effect transistor that delivers exceptional performance in switching applications. Manufactured with precision and expertise, this N-CHANNEL transistor boasts a single configuration with a built-in diode, offering reliability and efficiency like no other. With a minimum DS breakdown voltage of 60V and maximum drain current of 0.99A, this transistor is perfect for a wide range of projects. Trust Vishay Intertechnology to provide cutting-edge technology that enhances your creations.

Feature Benefit Bullets

Package Body Material: METAL

Provides good heat dissipation, ensuring the transistor stays cool and operates efficiently.

Polarity or Channel Type: N-CHANNEL

Suitable for applications requiring N-channel transistors, offering compatibility and flexibility.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient built-in diode for specific circuit requirements, reducing the need for additional components.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable and efficient performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

Higher breakdown voltage provides added protection and reliability in high voltage circuits.

Maximum Drain Current (ID): 0.99 A

Capable of handling high drain currents, making it suitable for a variety of applications.

Maximum Drain-Source On Resistance: 3 ohm

Low on-resistance ensures minimal power loss and efficient operation of the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Advanced MOSFET technology offers high performance and reliability in various applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6660JANTX attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.99 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

MIL

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N6660JANTX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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