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2N6659

NXP Semiconductors

2N6659 by NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 35 V;

Median Price

$19.805

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 20 parts In-Stock

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$7.690

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$5.770

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$5.000

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$7.690

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$5.000

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American Microsemiconductor Inc.

USA . 903 parts In-Stock

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$14.610

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TEDSS.com

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Freelance Electronics

USA . 177 parts In-Stock

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$38.894

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$40.839

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$38.505

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177

$38.894

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Vyrian

USA . 29,101 parts In-Stock

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ES Components

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Digiode

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Anansix

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Prism Electronics

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Jameco Electronics

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ComSIT Distribution GmbH

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Electronics Depot

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Electronic Expediters

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Standard Data Resources

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Sunrise Surplus Inc.

USA . 14 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Mil-Aero Solutions, Inc.

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Bristol Electronics

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Microfarads

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NAC Semi

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Sinequanon

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Manoshevitz Elec. Sales

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North Shore Components

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Resion

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LittleDiode

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Distributors (Availability)

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One Stop Electronics

USA . 1,556 parts In-Stock

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$8.050

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Corphita

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Northwest PG Solutions

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Native Components

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UNI Independent Distributors

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Kepictronics

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Perfect Parts

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Assy Fe

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Authorized Procurement Solutions

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Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6659 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

35 V

Maximum Drain Current (ID):

1.4 A

Maximum Drain-Source On Resistance:

1.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

15 pF

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N6659 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-299-8456, 5961012998456, 5961-01-145-7255, 5961011457255, 5961-14-405-9516, 5961144059516, 5961-99-795-5842, 5961997955842, 5962-00-248-5241, 5962002485241

NIIN

012998456, 011457255, 144059516, 997955842, 002485241

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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