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2N6661JTXL02

Vishay Intertechnology

2N6661JTXL02 by Vishay Intertechnology

Vishay Intertechnology's 2N6661JTXL02 is a N-CHANNEL FET with 90V DS Breakdown Voltage, 0.86A ID, and 4Ω RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Package style is CYLINDRICAL with METAL-OXIDE SEMICONDUCTOR technology, suitable for high power dissipation up to 6.25W at 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,594 parts In-Stock

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VNN

France . 25 parts In-Stock

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25

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Nova Conductors

Japan . 10 parts In-Stock

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Advanced Electronics

New Zealand . 54 parts In-Stock

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$0.858

100+ parts

$0.781

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$0.704

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54

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Corohmni

South Africa . 391 parts In-Stock

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$1.691

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AZTECH Wire

Italy . 322 parts In-Stock

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$8.293

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Ampacity Inc.

Singapore . 1,116 parts In-Stock

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$28.050

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Component Stockers USA

USA . 714 parts In-Stock

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$99.990

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714

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the 2N6661JTXL02 by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay delivers top-quality Small Signal Field Effect Transistors that provide reliable performance for various applications. With a focus on value and innovation, this N-CHANNEL transistor offers enhanced switching capabilities and a built-in diode for seamless operation. Experience the benefits of efficiency and precision with Vishay's 2N6661JTXL02, your solution for high-performance electronic systems.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material ensures good heat dissipation, making this transistor suitable for high power applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher mobility and conductivity, making them more efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse polarity protection and simplifies the circuit design, making this transistor convenient for applications where protection is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Minimum DS Breakdown Voltage: 90 V

The high breakdown voltage allows this transistor to handle high voltages, making it suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 0.86 A

With a high maximum drain current, this transistor can handle significant current flow, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 6.25 W

The high power dissipation capability ensures the transistor can handle high power levels without overheating, increasing its reliability.

Maximum Drain-Source On Resistance: 4 ohm

The low on-resistance of the transistor helps minimize power loss and improve overall efficiency in switching applications.

Maximum Feedback Capacitance (Crss): 10 pF

With a low feedback capacitance, this transistor is less likely to cause oscillations or instability in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6661JTXL02 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

90 V

Maximum Drain Current (Abs) (ID):

.86 A

Maximum Drain Current (ID):

.86 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N6661JTXL02 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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